公开(公告)号：US5780354A

公开(公告)日：1998-07-14

申请号：US576538

申请日：1995-12-21

申请人： Ronald Dekker ,  Henricus G.R. Maas ,  Steffen Wilhelm Hahn

发明人： Ronald Dekker ,  Henricus G.R. Maas ,  Steffen Wilhelm Hahn

IPC分类号： H01L21/02 ,  H01L21/20 ,  H01L21/336 ,  H01L21/58 ,  H01L21/60 ,  H01L21/68 ,  H01L23/498 ,  H01L27/12 ,  H01L29/786 ,  H04L21/20

CPC分类号： H01L21/6835 ,  H01L23/49811 ,  H01L24/29 ,  H01L24/81 ,  H01L24/83 ,  H01L27/1203 ,  H01L2221/68359 ,  H01L2221/68363 ,  H01L2224/2919 ,  H01L2224/81801 ,  H01L2224/8319 ,  H01L2224/8385 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01011 ,  H01L2924/01015 ,  H01L2924/01033 ,  H01L2924/0665 ,  H01L2924/07802 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/30105 ,  Y10S438/928 ,  Y10S438/958

摘要： A method of manufacturing a semiconductor device which starts with a semiconductor wafer which is provided with a layer of semiconductor material lying on an insulating layer at a first side. Semiconductor elements and conductor tracks are formed on this first side of the semiconductor wafer. Then the semiconductor wafer is fastened with this first side to a support wafer, and material is removed from the semiconductor wafer from its other, second side until the insulating layer has been exposed. The method starts with a semiconductor wafer whose insulating layer is an insulating as well as a passivating layer. The semiconductor device must be provided with a usual passivating layer after its manufacture in order to protect it against moisture and other influences. In the method described here, such a passivating layer is present already before the manufacture of the semiconductor device starts.

摘要翻译： 一种制造半导体器件的方法，该半导体器件从在第一侧设置有位于绝缘层上的半导体材料层的半导体晶片开始。 半导体元件和导体轨迹形成在半导体晶片的第一侧上。 然后将半导体晶片与该第一侧紧固到支撑晶片，并且材料从其另一侧除去半导体晶片，直到绝缘层暴露。 该方法从其绝缘层是绝缘的半导体晶片以及钝化层开始。 半导体器件在其制造之后必须设置有通常的钝化层，以便防止其受潮和其它影响。 在这里描述的方法中，这种钝化层在半导体器件的制造开始之前已经存在。