公开(公告)号：US20060068088A1

公开(公告)日：2006-03-30

申请号：US10952292

申请日：2004-09-28

申请人： Hae-Do Jeong ,  Jae-Young Choi ,  Hyoung-Jae Kim ,  Heon-Deok Seo ,  Boum-Young Park ,  Jae-Hong Park

发明人： Hae-Do Jeong ,  Jae-Young Choi ,  Hyoung-Jae Kim ,  Heon-Deok Seo ,  Boum-Young Park ,  Jae-Hong Park

IPC分类号： B28B7/38

CPC分类号： B24B37/26 ,  B24D18/0009

摘要： The present invention relates to a chemical mechanical polishing (CMP) pad with a micro-mold, and a production method thereof. More particularly, the present invention relates to a CMP pad with a micro-mold, in which the surface of the CMP pad is uniformly formed so as to avoid the glazing of the polishing pad, prevent a change in slurry flow and maintain the contact area between the polishing pad and a semiconductor wafer constant, thus allowing the wafer to be polished in a continuous and stable manner, and permitting the semiconductor wafer to be polished into the desired shape, as well as a production method thereof.

摘要翻译： 本发明涉及具有微型模具的化学机械抛光（CMP）垫及其制造方法。 更具体地说，本发明涉及一种具有微模的CMP垫，其中CMP垫的表面均匀地形成，以避免抛光垫的上光，防止浆料流动的变化并保持接触面积 在抛光垫和半导体晶片之间恒定，从而允许晶片以连续且稳定的方式被抛光，并且允许半导体晶片被抛光成所需的形状，以及其制造方法。