公开(公告)号：US5151255A

公开(公告)日：1992-09-29

申请号：US593480

申请日：1990-10-03

申请人： Nobuhiro Fukuda ,  Sadao Kobayashi ,  Kenji Miyachi ,  Hidemi Takenouchi ,  Yoji Kawahara ,  Takayuki Teramoto

发明人： Nobuhiro Fukuda ,  Sadao Kobayashi ,  Kenji Miyachi ,  Hidemi Takenouchi ,  Yoji Kawahara ,  Takayuki Teramoto

IPC分类号： H01L31/04 ,  H01L31/20

CPC分类号： H01L31/202 ,  Y02E10/50 ,  Y02P70/521

摘要： A method for forming a dihydride rich amorphous silicon semiconductor film suitable for use as a window material of solar cells only from a silicon material, which comprises decomposing a gaseous mixture composed of disilane, a dopant capable of imparting p-type electrical conductivity and a diluent gas by applying a glow discharge energy, and thereby forming a semiconductor film having an optical band gap of at least 1.8 eV, preferably more than 1.9 eV, on a substrate.

摘要翻译： 一种用于形成适合仅用作硅材料的太阳能电池窗材料的二氢化氢非晶硅半导体膜的方法，其包括分解由乙硅烷组成的气态混合物，能赋予p型导电性的掺杂剂和稀释剂 通过施加辉光放电能量，从而在衬底上形成具有至少1.8eV，优选大于1.9eV的光学带隙的半导体膜。