Memory test method and memory test device
    3.
    发明申请
    Memory test method and memory test device 有权
    内存测试方法和内存测试设备

    公开(公告)号:US20090296505A1

    公开(公告)日:2009-12-03

    申请号:US12382485

    申请日:2009-03-17

    IPC分类号: G11C29/00

    CPC分类号: G11C29/20 G11C2029/3602

    摘要: A memory test is performed by sequentially generating a number of n-bit addresses, whose first to k-th bits (1≦k≦n) are all set to one of two values, 0 or 1, and whose (k+1)th to n-th bits are all set to the other one of the two values, for all k's which range from 1 to n; writing first test data to each of the generated addresses in the memory; reading second test data from each of the addresses in the memory; and comparing the first test data with the second test data.

    摘要翻译: 通过顺序地生成多个n位地址来执行存储器测试,其中第一至第k位(1 <= k <= n)都被设置为两个值0或1之一,并且其(k + 对于从1到n的所有k,所有1到第n位都被设置为两个值中的另一个值; 将第一测试数据写入存储器中的每个生成的地址; 从存储器中的每个地址读取第二测试数据; 以及将所述第一测试数据与所述第二测试数据进行比较。

    Memory test method and memory test device
    4.
    发明授权
    Memory test method and memory test device 有权
    内存测试方法和内存测试设备

    公开(公告)号:US08503259B2

    公开(公告)日:2013-08-06

    申请号:US12382485

    申请日:2009-03-17

    IPC分类号: G11C29/00

    CPC分类号: G11C29/20 G11C2029/3602

    摘要: A memory test is performed by sequentially generating a number of n-bit addresses, whose first to k-th bits (1≦k≦n) are all set to one of two values, 0 or 1, and whose (k+1)th to n-th bits are all set to the other one of the two values, for all k's which range from 1 to n; writing first test data to each of the generated addresses in the memory; reading second test data from each of the addresses in the memory; and comparing the first test data with the second test data.

    摘要翻译: 通过顺序地生成多个n位地址来执行存储器测试,其中第一到第k位(1 @ k @ n)都被设置为两个值0或1中的一个,并且其(k + 1) 对于从1到n的所有k,所有第th到第n位都被设置为两个值中的另一个值; 将第一测试数据写入存储器中的每个生成的地址; 从存储器中的每个地址读取第二测试数据; 以及将所述第一测试数据与所述第二测试数据进行比较。