公开(公告)号：US20060240606A1

公开(公告)日：2006-10-26

申请号：US11411137

申请日：2006-04-26

申请人： Hideto Motoshima ,  Hisanobu Shimodozono ,  Junji Nishimoto ,  Makoto Horinouchi ,  Shouichi Sonohata

发明人： Hideto Motoshima ,  Hisanobu Shimodozono ,  Junji Nishimoto ,  Makoto Horinouchi ,  Shouichi Sonohata

IPC分类号： H01L21/00 ,  H01L21/84

CPC分类号： H01L27/124 ,  G02F1/134363 ,  G02F1/136286

摘要： Disclosed is a photoresist film which is formed in a manner of covering at least a source electrode, a source line, a pixel electrode, a drain electrode, a drain line, a semiconductor film and a protective film, and further covering a gate insulting film in their vicinities. Moreover, wet and dry etchings are sequentially performed by using the photoresist film as a mask. Due to this etching, a residual pattern existing on the gate insulating film is etched.

摘要翻译： 公开了以至少覆盖源电极，源极线，像素电极，漏电极，漏极线，半导体膜和保护膜的方式形成的光致抗蚀剂膜，并且还覆盖栅极绝缘膜 在附近。 此外，通过使用光致抗蚀剂膜作为掩模来顺序地进行湿法和干蚀刻。 由于该蚀刻，蚀刻存在于栅极绝缘膜上的残留图案。

公开(公告)号：US07300828B2

公开(公告)日：2007-11-27

申请号：US11411137

申请日：2006-04-26

申请人： Hideto Motoshima ,  Hisanobu Shimodozono ,  Junji Nishimoto ,  Makoto Horinouchi ,  Shouichi Sonohata

发明人： Hideto Motoshima ,  Hisanobu Shimodozono ,  Junji Nishimoto ,  Makoto Horinouchi ,  Shouichi Sonohata

IPC分类号： H01L21/00

CPC分类号： H01L27/124 ,  G02F1/134363 ,  G02F1/136286

摘要： Disclosed is a photoresist film which is formed in a manner of covering at least a source electrode, a source line, a pixel electrode, a drain electrode, a drain line, a semiconductor film and a protective film, and further covering a gate insulting film in their vicinities. Moreover, wet and dry etchings are sequentially performed by using the photoresist film as a mask. Due to this etching, a residual pattern existing on the gate insulating film is etched.

摘要翻译： 公开了以至少覆盖源电极，源极线，像素电极，漏电极，漏极线，半导体膜和保护膜的方式形成的光致抗蚀剂膜，并且还覆盖栅极绝缘膜 在附近。 此外，通过使用光致抗蚀剂膜作为掩模来顺序地进行湿法和干蚀刻。 由于该蚀刻，蚀刻存在于栅极绝缘膜上的残留图案。