公开(公告)号：US20100091402A1

公开(公告)日：2010-04-15

申请号：US12653216

申请日：2009-12-09

Applicant: Hong Deng ,  Yoshihiro Ikeda ,  Mary Frances Minardi ,  Kentaro Takano ,  Kai Tang

Inventor： Hong Deng ,  Yoshihiro Ikeda ,  Mary Frances Minardi ,  Kentaro Takano ,  Kai Tang

IPC: G11B5/127 ,  G11B5/66

CPC classification number: G11B5/667 ,  G11B5/7325

Abstract: The invention uses an adhesion layer of an amorphous alloy of aluminum. A first aluminum titanium embodiment of the amorphous adhesion layer preferably contains approximately equal amounts of aluminum and titanium (+/−5 at. %). A second embodiment of the amorphous adhesion layer preferably contains approximately equal amounts of aluminum and titanium (+/−5 at. %) and up to 10 at. % Zr with 5 at. % Zr being preferred. A third embodiment is aluminum tantalum preferably including from 15 to 25 at. % tantalum with 20 at. % being preferred. The most preferred compositions are Al50Ti50, Al47.5Ti47.5Zr5 or Al80Ta20. The adhesion layer is deposited onto the substrate. The substrate can be glass or a metal such as NiP-plated AlMg. The preferred embodiment of media according to the invention is for perpendicular recording and includes a magnetically soft underlayer deposited above the adhesion layer.

Abstract translation: 本发明使用铝非晶合金的粘合层。 无定形粘合层的第一铝钛实施例优选含有大约相等量的铝和钛（+/- 5原子％）。 无定形粘合层的第二个实施方案优选含有大约相等量的铝和钛（+/- 5原子％）和至多10原子。 ％Zr，5 at。 ％Zr是优选的。 第三实施例是铝钽，优选包括15至25at。 20％钽。 ％是首选。 最优选的组合物是Al 50 Ti 50，Al 47.5 Ti 47.5 Zr 5或Al 80 T a 20。 粘附层沉积在基底上。 基底可以是玻璃或诸如NiP镀AlMg的金属。 根据本发明的介质的优选实施例是用于垂直记录，并且包括沉积在粘附层上方的磁软底层。

公开(公告)号：US20090031033A1

公开(公告)日：2009-01-29

申请号：US11828619

申请日：2007-07-26

Applicant: Hong Deng ,  Jodi E. Everdon ,  Colette A. Manoni ,  Renata Rand McFadden ,  Jennifer A. Thompson

Inventor： Hong Deng ,  Jodi E. Everdon ,  Colette A. Manoni ,  Renata Rand McFadden ,  Jennifer A. Thompson

IPC: G06F15/16

CPC classification number: H04L63/126 ,  H04L61/3015 ,  H04L63/1441 ,  H04L63/1483

Abstract: A system, method and computer program product for a user to verify that a network resource address is trusted. At least one entity registration is stored at a server. Each entity registration comprises an identity of an entity and entity addressing information associated with the identity of the entity. The existence of at least one entity whose identity is included in the at least one entity registration is confirmed. A query comprising a target addressing information is received from a client. If the target addressing information matches the entity addressing information, the identity of the entity associated with the entity addressing information is determined and a result comprising the identity of the entity associated with the entity addressing information matching the target addressing information is transmitted to the client. If no entity addressing information matches the target addressing information, an indication of such is transmitted to the client.

Abstract translation: 用于用户验证网络资源地址被信任的系统，方法和计算机程序产品。 至少一个实体注册被存储在服务器上。 每个实体注册包括与实体的身份相关联的实体和实体寻址信息的身份。 确认至少一个实体的身份被包含在至少一个实体注册中的存在。 从客户端接收包括目标寻址信息的查询。 如果目标寻址信息与实体寻址信息匹配，则确定与实体寻址信息相关联的实体的身份，并将包括与实现寻址信息匹配的实体寻址信息相关联的实体的身份的结果发送给客户端。 如果没有实体寻址信息与目标寻址信息匹配，则向客户端发送这样的指示。

公开(公告)号：US20130157082A1

公开(公告)日：2013-06-20

申请号：US13328869

申请日：2011-12-16

Applicant: Hong Deng ,  Xing-Cai Guo ,  Vedantham Raman ,  Robert Waltman ,  Yu-Chen Wu

Inventor： Hong Deng ,  Xing-Cai Guo ,  Vedantham Raman ,  Robert Waltman ,  Yu-Chen Wu

IPC: G11B5/00 ,  C10M131/10

CPC classification number: C10M131/10 ,  C10M105/54 ,  C10M107/38 ,  C10M147/00 ,  C10M147/04 ,  C10M2211/0406 ,  C10M2211/063 ,  C10M2213/04 ,  C10M2213/043 ,  C10N2240/204 ,  C10N2250/121 ,  G11B5/00

Abstract: A surface agent includes two end portions and a middle portion disposed between the end portions. The end portions include an anchor group or a truncation group. The anchor group includes at least one surface active functional group. The midsection includes at least one perfluoroalkyl-branched perfluorinated ether unit.

Abstract translation: 表面剂包括两个端部和设置在端部之间的中间部分。 端部包括锚组或截断组。 锚组包括至少一个表面活性官能团。 中间部分包括至少一个全氟烷基支链全氟化醚单元。

公开(公告)号：US07953912B2

公开(公告)日：2011-05-31

申请号：US12035513

申请日：2008-02-22

Applicant: Rajaram B. Krishnamurthy ,  Hong Deng ,  Tjomas A. Gregg ,  John P. Rankin

Inventor： Rajaram B. Krishnamurthy ,  Hong Deng ,  Tjomas A. Gregg ,  John P. Rankin

IPC: G06F13/00 ,  H05K7/10 ,  G06F3/00

CPC classification number: G06F9/5061

Abstract: A method of guided attachment of hardware accelerators to slots of a computing system includes dividing a first group of hardware accelerators into a plurality of priority classes, dividing a first group of slots of the computing system into a plurality of hierarchical tiers, and attaching each hardware accelerator of the first group of hardware accelerators to a slot matched to the hardware accelerators based on comparison of a priority class of the hardware accelerator and a hierarchical tier of the slot.

Abstract translation: 将硬件加速器引导连接到计算系统的时隙的方法包括将第一组硬件加速器分为多个优先级类别，将计算系统的第一组时隙划分成多个分级层，以及附加每个硬件 基于硬件加速器的优先级等级与该时隙的分级层的比较，将第一组硬件加速器的加速器加速到与硬件加速器匹配的时隙。

公开(公告)号：US07651794B2

公开(公告)日：2010-01-26

申请号：US11118850

申请日：2005-04-28

Applicant: Hong Deng ,  Yoshihiro Ikeda ,  Mary Frances Minardi ,  Kentaro Takano ,  Kai Tang

Inventor： Hong Deng ,  Yoshihiro Ikeda ,  Mary Frances Minardi ,  Kentaro Takano ,  Kai Tang

IPC: G11B5/71 ,  G11B5/708

CPC classification number: G11B5/667 ,  G11B5/7325

Abstract: The invention uses an adhesion layer of an amorphous alloy of aluminum. A first aluminum titanium embodiment of the amorphous adhesion layer preferably contains approximately equal amounts of aluminum and titanium (+/−5 at. %). A second embodiment of the amorphous adhesion layer preferably contains approximately equal amounts of aluminum and titanium (+/−5 at. %) and up to 10 at. % Zr with 5 at. % Zr being preferred. A third embodiment is aluminum tantalum preferably including from 15 to 25 at. % tantalum with 20 at. % being preferred. The most preferred compositions are Al50Ti50, Al47.5Ti47.5Zr5 or Al80 Ta20. The adhesion layer is deposited onto the substrate. The substrate can be glass or a metal such as NiP-plated AlMg. The preferred embodiment of media according to the invention is for perpendicular recording and includes a magnetically soft underlayer deposited above the adhesion layer.

Abstract translation: 本发明使用铝非晶合金的粘合层。 无定形粘合层的第一铝钛实施例优选含有大约相等量的铝和钛（+/- 5原子％）。 无定形粘合层的第二个实施方案优选含有大约相等量的铝和钛（+/- 5原子％）和至多10原子。 ％Zr，5 at。 ％Zr是优选的。 第三实施例是铝钽，优选包括15至25at。 20％钽。 ％优先。 最优选的组成是Al50Ti50，Al47.5Ti47.5Zr5或Al80 Ta20。 粘附层沉积在基底上。 基底可以是玻璃或诸如NiP镀AlMg的金属。 根据本发明的介质的优选实施例是用于垂直记录，并且包括沉积在粘附层上方的磁软底层。

公开(公告)号：US20090213127A1

公开(公告)日：2009-08-27

申请号：US12035513

申请日：2008-02-22

Applicant: Rajaram B. Krishnamurthy ,  Hong Deng ,  Thomas A. Gregg ,  John P. Rankin

Inventor： Rajaram B. Krishnamurthy ,  Hong Deng ,  Thomas A. Gregg ,  John P. Rankin

IPC: G06F15/16

CPC classification number: G06F9/5061

Abstract: A method of guided attachment of hardware accelerators to slots of a computing system includes dividing a first group of hardware accelerators into a plurality of priority classes, dividing a first group of slots of the computing system into a plurality of hierarchical tiers, and attaching each hardware accelerator of the first group of hardware accelerators to a slot matched to the hardware accelerators based on comparison of a priority class of the hardware accelerator and a hierarchical tier of the slot.

Abstract translation: 将硬件加速器引导连接到计算系统的时隙的方法包括将第一组硬件加速器分为多个优先级类别，将计算系统的第一组时隙划分成多个分级层，以及附加每个硬件 基于硬件加速器的优先级等级与该时隙的分级层的比较，将第一组硬件加速器的加速器加速到与硬件加速器匹配的时隙。

公开(公告)号：US20090204734A1

公开(公告)日：2009-08-13

申请号：US12030352

申请日：2008-02-13

Applicant: Gary E. Strait ,  Mark A. Check ,  Hong Deng ,  Diana L. Orf

Inventor： Gary E. Strait ,  Mark A. Check ,  Hong Deng ,  Diana L. Orf

IPC: G06F13/00

CPC classification number: G06F13/4059

Abstract: The exemplary embodiment of the present invention provides a storage buffer management scheme for I/O store buffers. Specifically, the storage buffer management system as described within the exemplary embodiment of the present invention is configured to comprise storage buffers that have the capability to efficiently support 128 byte or 256 byte I/O data transmission lines. The presently implemented storage buffer management scheme enables for a limited number of store buffers to be associated with a fixed number of storage state machines (i.e., queue positions) and thereafter the allowing for the matched pairs to be allocated in order to achieve maximum store throughput for varying combinations of store sizes of 128 and 256 bytes.

Abstract translation: 本发明的示例性实施例提供了用于I / O存储缓冲器的存储缓冲器管理方案。 具体地说，在本发明的示例性实施例中描述的存储缓冲器管理系统被配置为包括具有有效支持128字节或256字节的I / O数据传输线的能力的存储缓冲器。 目前实现的存储缓冲器管理方案使得有限数量的存储缓冲器能够与固定数量的存储状态机（即，队列位置）相关联，并且之后允许分配匹配的对以便实现最大存储吞吐量 适用于128和256字节存储大小的不同组合。

公开(公告)号：US20060246324A1

公开(公告)日：2006-11-02

申请号：US11118850

申请日：2005-04-28

Applicant: Hong Deng ,  Yoshihiro Ikeda ,  Mary Minardi ,  Kentaro Takano ,  Kai Tang

Inventor： Hong Deng ,  Yoshihiro Ikeda ,  Mary Minardi ,  Kentaro Takano ,  Kai Tang

IPC: G11B5/66

CPC classification number: G11B5/667 ,  G11B5/7325

Abstract: The invention uses an adhesion layer of an amorphous alloy of aluminum. A first aluminum titanium embodiment of the amorphous adhesion layer preferably contains approximately equal amounts of aluminum and titanium (+/−5 at. %). A second embodiment of the amorphous adhesion layer preferably contains approximately equal amounts of aluminum and titanium (+/−5 at. %) and up to 10 at. % Zr with 5 at. % Zr being preferred. A third embodiment is aluminum tantalum preferably including from 15 to 25 at. % tantalum with 20 at. % being preferred. The most preferred compositions are Al50Ti50, Al47.5Ti47.5Zr5 or Al80 Ta20. The adhesion layer is deposited onto the substrate. The substrate can be glass or a metal such as NiP-plated AlMg. The preferred embodiment of media according to the invention is for perpendicular recording and includes a magnetically soft underlayer deposited above the adhesion layer.

Abstract translation: 本发明使用铝非晶合金的粘合层。 无定形粘合层的第一铝钛实施例优选含有大约相等量的铝和钛（+/- 5原子％）。 无定形粘合层的第二个实施方案优选含有大约相等量的铝和钛（+/- 5原子％）和至多10原子。 ％Zr，5 at。 ％Zr是优选的。 第三实施例是铝钽，优选包括15至25at。 20％钽。 ％是首选。 最优选的组合物是Al 50 N 50，Al 47.5 Ti 47.5 Zr 5 >或> 80 20 20。 粘附层沉积在基底上。 基底可以是玻璃或诸如NiP镀AlMg的金属。 根据本发明的介质的优选实施例是用于垂直记录，并且包括沉积在粘附层上方的磁软底层。

公开(公告)号：US08090883B2

公开(公告)日：2012-01-03

申请号：US12850198

申请日：2010-08-04

Applicant: Gary E. Strait ,  Mark A. Check ,  Hong Deng ,  Diana L. Orf ,  Hanno Ulrich

Inventor： Gary E. Strait ,  Mark A. Check ,  Hong Deng ,  Diana L. Orf ,  Hanno Ulrich

IPC: G06F13/00

CPC classification number: G06F13/4059

Abstract: The exemplary embodiment of the present invention provides a storage buffer management scheme for I/O store buffers. Specifically, the storage buffer management system as described within the exemplary embodiment of the present invention is configured to comprise storage buffers that have the capability to efficiently support 128 byte or 256 byte I/O data transmission lines. The presently implemented storage buffer management scheme enables for a limited number of store buffers to be associated with a fixed number of storage state machines (i.e., queue positions) and thereafter the allowing for the matched pairs to be allocated in order to achieve maximum store throughput for varying combinations of store sizes of 128 and 256 bytes.

Abstract translation: 本发明的示例性实施例提供了用于I / O存储缓冲器的存储缓冲器管理方案。 具体地说，在本发明的示例性实施例中描述的存储缓冲器管理系统被配置为包括具有有效支持128字节或256字节的I / O数据传输线的能力的存储缓冲器。 目前实现的存储缓冲器管理方案使得有限数量的存储缓冲器能够与固定数量的存储状态机（即，队列位置）相关联，并且之后允许分配匹配的对以便实现最大存储吞吐量 适用于128和256字节存储大小的不同组合。

公开(公告)号：US07886089B2

公开(公告)日：2011-02-08

申请号：US12030352

申请日：2008-02-13

Applicant: Gary E. Strait ,  Mark A. Check ,  Hong Deng ,  Diana L. Orf

Inventor： Gary E. Strait ,  Mark A. Check ,  Hong Deng ,  Diana L. Orf

IPC: G06F13/00

CPC classification number: G06F13/4059

Abstract: The exemplary embodiment of the present invention provides a storage buffer management scheme for I/O store buffers. Specifically, the storage buffer management system as described within the exemplary embodiment of the present invention is configured to comprise storage buffers that have the capability to efficiently support 128 byte or 256 byte I/O data transmission lines. The presently implemented storage buffer management scheme enables for a limited number of store buffers to be associated with a fixed number of storage state machines (i.e., queue positions) and thereafter the allowing for the matched pairs to be allocated in order to achieve maximum store throughput for varying combinations of store sizes of 128 and 256 bytes.

Abstract translation: 本发明的示例性实施例提供了用于I / O存储缓冲器的存储缓冲器管理方案。 具体地说，在本发明的示例性实施例中描述的存储缓冲器管理系统被配置为包括具有有效支持128字节或256字节的I / O数据传输线的能力的存储缓冲器。 目前实现的存储缓冲器管理方案使得有限数量的存储缓冲器能够与固定数量的存储状态机（即，队列位置）相关联，并且之后允许分配匹配的对以便实现最大存储吞吐量 适用于128和256字节存储大小的不同组合。