公开(公告)号：US6150223A

公开(公告)日：2000-11-21

申请号：US287881

申请日：1999-04-07

Applicant: Horng-Non Chern ,  Kun-Chi Lin ,  Alex Hou ,  Chien-Hua Tsai ,  Tsu-An Lin

Inventor： Horng-Non Chern ,  Kun-Chi Lin ,  Alex Hou ,  Chien-Hua Tsai ,  Tsu-An Lin

IPC: H01L21/60 ,  H01L21/8234 ,  H01L21/336 ,  H01L21/3205 ,  H01L21/4763 ,  H01L21/76

CPC classification number: H01L21/76897 ,  H01L21/823468

Abstract: A method for forming a different width of gate spacer is disclosed. The method includes firstly forming a gate oxide layer on a semiconductor substrate. A polysilicon layer, a conductive layer, a first dielectric layer are formed in order on the gate oxide layer. The first dielectric layer, the conductive layer, the polysilicon layer, and the gate oxide layer are further etched using them as the interior gate and the peripheral gate. Next, second dielectric layer, third dielectric layer, and fourth dielectric layer are formed over the interior gate and the peripheral gate, and a first photoresist layer abuts the surface of the fourth dielectric layer of the interior circuit. Moreover, etching the fourth dielectric layer of peripheral gate to form a second spacer of peripheral gate, and etching the third dielectric layer of the peripheral gate are undertaken to form a first spacer of the peripheral gate. Removing the first photoresist layer and the fourth dielectric layer of the interior circuit, a fifth dielectric layer is formed on the third dielectric layer of the interior circuit. The fourth dielectric layer and the top surface of the second dielectric layer of the peripheral circuit are removed. The fifth dielectric layer is formed on the first dielectric layer and the third peripheral of the peripheral circuit, and then the second photoresist layer on the fifth dielectric layer, wherein the third photoresist layer is patterned as a bit-line contact via of the interior circuit and the bit-line contact vias of the peripheral circuit. Finally, anisotropically etching the third photoresist layer and the fifth dielectric layer, a bit-line to the substrate contact via and a bit-line to the gate contact via are formed inside the fifth dielectric layer.

Abstract translation: 公开了一种用于形成不同宽度的栅极间隔物的方法。 该方法包括首先在半导体衬底上形成栅氧化层。 在栅极氧化物层上依次形成多晶硅层，导电层，第一介电层。 使用它们作为内部栅极和外围栅极进一步蚀刻第一介电层，导电层，多晶硅层和栅极氧化物层。 接下来，在内部栅极和外围栅极上形成第二电介质层，第三电介质层和第四电介质层，并且第一光致抗蚀剂层邻接内部电路的第四电介质层的表面。 此外，蚀刻外围栅极的第四介电层以形成外围栅极的第二间隔物，并且蚀刻外围栅极的第三介电层以形成外围栅极的第一间隔物。 去除内部电路的第一光致抗蚀剂层和第四电介质层，在内部电路的第三电介质层上形成第五电介质层。 除去第四电介质层和外围电路的第二电介质层的顶表面。 第五电介质层形成在第一电介质层和外围电路的第三外围，然后形成在第五介电层上的第二光致抗蚀剂层，其中第三光致抗蚀剂层被图案化为内部电路的位线接触通孔 和外围电路的位线接触通孔。 最后，在第五介电层内形成各向异性蚀刻第三光致抗蚀剂层和第五电介质层，到基板接触通孔的位线和到栅极接触通孔的位线。