公开(公告)号：US20090085039A1

公开(公告)日：2009-04-02

申请号：US12284581

申请日：2008-09-22

Applicant: Ming-Yu Chung ,  Shan-Hung Tsai ,  Su-Fen Chen ,  Kuan-Shiang Wong ,  Hsiao-Po Chang ,  Jung-Huang Chien ,  Hsiu-Hsiu Chen

Inventor： Ming-Yu Chung ,  Shan-Hung Tsai ,  Su-Fen Chen ,  Kuan-Shiang Wong ,  Hsiao-Po Chang ,  Jung-Huang Chien ,  Hsiu-Hsiu Chen

IPC: H01L21/336 ,  H01L33/00

CPC classification number: H01L27/1255 ,  H01L29/4908

Abstract: The invention provides a method for fabricating a low-temperature polysilicon (LTPS) driving circuit and thin film transistor. The method includes: providing a substrate, forming an active layer, forming a gate insulating layer, forming a dielectric layer having an extending portion and forming a gate electrode. The extending portion of the dielectric layer and the gate electrode are formed during the same step, and they can serve as a mask during a later doping process so that a lightly doped source/drain region and a source/drain region are formed during the same time without forming extra masks.

Abstract translation: 本发明提供一种制造低温多晶硅（LTPS）驱动电路和薄膜晶体管的方法。 该方法包括：提供衬底，形成有源层，形成栅极绝缘层，形成具有延伸部分并形成栅电极的电介质层。 电介质层和栅电极的延伸部分在相同的步骤中形成，并且它们可以在稍后的掺杂工艺中用作掩模，使得在同一步骤期间形成轻掺杂的源极/漏极区域和源极/漏极区域 时间没有形成额外的面具。