公开(公告)号：US5741730A

公开(公告)日：1998-04-21

申请号：US489595

申请日：1995-06-12

申请人： Hsin-Min Tseng ,  David Wang

发明人： Hsin-Min Tseng ,  David Wang

IPC分类号： H01L27/02 ,  H01L27/118 ,  H01L21/82 ,  H01L21/44

CPC分类号： H01L27/11807 ,  H01L27/0207

摘要： The present invention is related to a flexible IC layout method utilized for an IC having a plurality of logic gates in a first direction connected with a plurality of logic gates in a second direction wherein each of the logic gates has at least one polysilicon region and each of the logic gates in the first direction has an output serving as an input of a corresponding one of the logic gates in the second direction, which includes a step of forming input terminals for the logic gates by ion implantation. The present invention is flexible because the addition or deduction of the number of the input terminals according to the present invention can be achieved by ion implantation.

摘要翻译： 本发明涉及一种用于具有在第二方向上与多个逻辑门连接的第一方向上的多个逻辑门的IC的灵活IC布局方法，其中每个逻辑门具有至少一个多晶硅区和每个 在第一方向上的逻辑门的输出具有作为第二方向的对应逻辑门的输入的输出，其包括通过离子注入形成用于逻辑门的输入端的步骤。 本发明是灵活的，因为根据本发明的输入端子的数量的添加或减少可以通过离子注入来实现。