公开(公告)号：US20070152919A1

公开(公告)日：2007-07-05

申请号：US11326245

申请日：2006-01-04

Applicant: Chang-Ho Tseng ,  Yu-Chun Shih ,  Hsuan-Chih Huang

Inventor： Chang-Ho Tseng ,  Yu-Chun Shih ,  Hsuan-Chih Huang

IPC: G09G3/30

CPC classification number: G09G3/3233 ,  G09G2300/0842 ,  G09G2330/021

Abstract: A pixel unit. A first thin film transistor comprises a first control terminal receiving a scan signal, a first electrode receiving a data signal, and a second electrode. A second thin film transistor comprises a second control terminal coupled to the second electrode, a third electrode receiving a first voltage, a fourth electrode, and a fifth electrode coupled to one of the third and the fourth electrodes. A capacitor is coupled between the second control terminal and the third electrode. A light-emitting device is coupled between the fourth electrode and a second voltage.

Abstract translation: 像素单位。 第一薄膜晶体管包括接收扫描信号的第一控制端子，接收数据信号的第一电极和第二电极。 第二薄膜晶体管包括耦合到第二电极的第二控制端子，接收第一电压的第三电极，第四电极和耦合到第三和第四电极之一的第五电极。 电容器耦合在第二控制端子和第三电极之间。 发光器件耦合在第四电极和第二电压之间。

公开(公告)号：US07545348B2

公开(公告)日：2009-06-09

申请号：US11326245

申请日：2006-01-04

Applicant: Chang-Ho Tseng ,  Yu-Chun Shih ,  Hsuan-Chih Huang

Inventor： Chang-Ho Tseng ,  Yu-Chun Shih ,  Hsuan-Chih Huang

IPC: G09G3/30

CPC classification number: G09G3/3233 ,  G09G2300/0842 ,  G09G2330/021

Abstract: A pixel unit. A first thin film transistor comprises a first control terminal receiving a scan signal, a first electrode receiving a data signal, and a second electrode. A second thin film transistor comprises a second control terminal coupled to the second electrode, a third electrode receiving a first voltage, a fourth electrode, and a fifth electrode coupled to one of the third and the fourth electrodes. A capacitor is coupled between the second control terminal and the third electrode. A light-emitting device is coupled between the fourth electrode and a second voltage.

Abstract translation: 像素单位。 第一薄膜晶体管包括接收扫描信号的第一控制端子，接收数据信号的第一电极和第二电极。 第二薄膜晶体管包括耦合到第二电极的第二控制端子，接收第一电压的第三电极，第四电极和耦合到第三和第四电极之一的第五电极。 电容器耦合在第二控制端子和第三电极之间。 发光器件耦合在第四电极和第二电压之间。

公开(公告)号：US20080185596A1

公开(公告)日：2008-08-07

申请号：US11670582

申请日：2007-02-02

Applicant: Chang-Ho Tseng ,  Yu-Chun Shih ,  Hsuan-Chih Huang

Inventor： Chang-Ho Tseng ,  Yu-Chun Shih ,  Hsuan-Chih Huang

IPC: H01L31/12 ,  H01L33/00

CPC classification number: H01L31/113 ,  H01L31/167

Abstract: Embodiments of a system for displaying images include a light emitting device with a plurality of photo sensors. Each photo sensor includes a PIN diode composed of an N+ doped semiconductor region, a P+ doped semiconductor region, and an intrinsic semiconductor region formed therebetween. An insulated control gate overlaps the intrinsic semiconductor region and is operative to provide the PIN diode with a controllable electric characteristic with respect to a saturation photo current at a saturation voltage.

Abstract translation: 用于显示图像的系统的实施例包括具有多个光传感器的发光装置。 每个光电传感器包括由掺杂N + N掺杂的半导体区域，掺杂POD的半导体区域和在其间形成的本征半导体区域构成的PIN二极管。 绝缘控制栅极与本征半导体区域重叠，并且可操作地为PIN二极管提供相对于饱和电压下的饱和光电流的可控电特性。