公开(公告)号：US07341939B2

公开(公告)日：2008-03-11

申请号：US11061056

申请日：2005-02-18

申请人： Dah-Chung Oweyang ,  Chih-Cheng Lin ,  Hsueh-Liang Hung ,  Bang-Chein Ho

发明人： Dah-Chung Oweyang ,  Chih-Cheng Lin ,  Hsueh-Liang Hung ,  Bang-Chein Ho

IPC分类号： H01L21/4763

CPC分类号： G03F7/38 ,  G03F7/091 ,  H01L21/0276

摘要： In the manufacture of a semiconductor, a DBARC layer is deposited upon a wafer to prevent reflection. A photo resist layer is deposited upon the DBARC layer and the wafer is selectively exposed to irradiation. The irradiation generates photo acid (H+ ions) in the exposed areas of the photo resist and DBARC. In order to provide better resolution in the DBARC for micro-features, an electric field is generated vertically through the coated wafer before or during post exposure baking (PEB) to create a uniform vertical distribution of H+ ions though the DBARC. The coated wafer is then developed to remove either the unexposed portions, or exposed portion of the DBARC. The cavities formed by the developer have side walls that are substantially vertical as a result of the uniform vertical distribution of the H+ ions.

摘要翻译： 在制造半导体时，将DBARC层沉积在晶片上以防止反射。 光致抗蚀剂层沉积在DBARC层上，并且晶片被选择性地暴露于照射下。 照射在光致抗蚀剂和DBARC的曝光区域产生光酸（H +离子）。 为了在DBARC中为微特征提供更好的分辨率，在后曝光烘烤（PEB）之前或期间，通过涂覆的晶片垂直产生电场，以通过DBARC产生H +离子的均匀垂直分布。 然后将涂覆的晶片展开以除去DBARC的未曝光部分或曝光部分。 由显影剂形成的空腔由于H +离子的均匀垂直分布而具有基本垂直的侧壁。

公开(公告)号：US20060189146A1

公开(公告)日：2006-08-24

申请号：US11061056

申请日：2005-02-18

申请人： Dah-Chung Oweyang ,  Chih-Cheng Lin ,  Hsueh-Liang Hung ,  Bang-Chein Ho

发明人： Dah-Chung Oweyang ,  Chih-Cheng Lin ,  Hsueh-Liang Hung ,  Bang-Chein Ho

IPC分类号： H01L21/469

CPC分类号： G03F7/38 ,  G03F7/091 ,  H01L21/0276

摘要： In the manufacture of a semiconductor, a DBARC layer is deposited upon a wafer to prevent reflection. A photo resist layer is deposited upon the DBARC layer and the wafer is selectively exposed to irradiation. The irradiation generates photo acid (H+ ions) in the exposed areas of the photo resist and DBARC. In order to provide better resolution in the DBARC for micro-features, an electric field is generated vertically through the coated wafer before or during post exposure baking (PEB) to create a uniform vertical distribution of H+ ions though the DBARC. The coated wafer is then developed to remove either the unexposed portions, or exposed portion of the DBARC. The cavities formed by the developer have side walls that are substantially vertical as a result of the uniform vertical distribution of the H+ ions.

摘要翻译： 在制造半导体时，将DBARC层沉积在晶片上以防止反射。 光致抗蚀剂层沉积在DBARC层上，并且晶片被选择性地暴露于照射下。 照射在光致抗蚀剂和DBARC的曝光区域中产生光酸（H +离子）。 为了在DBARC中为微特征提供更好的分辨率，在后曝光烘烤（PEB）之前或期间，通过涂覆的晶片垂直产生电场，以通过DBARC产生H +离子的均匀垂直分布。 然后将涂覆的晶片展开以除去DBARC的未曝光部分或曝光部分。 由显影剂形成的空腔由于H +离子的均匀垂直分布而具有基本垂直的侧壁。