公开(公告)号：US20090053875A1

公开(公告)日：2009-02-26

申请号：US12195229

申请日：2008-08-20

申请人： In Kyum KIM ,  Suk June KANG ,  Hyung Sang YUK

发明人： In Kyum KIM ,  Suk June KANG ,  Hyung Sang YUK

IPC分类号： H01L21/762

CPC分类号： H01L21/76254

摘要： Provided is a method of manufacturing a strained silicon-on-insulator (SSOI) substrate that can manufacture an SSOI substrate by separating a bonded substrate using a low temperature heat treatment. The manufacturing method includes: providing a substrate; growing silicon germanium (SiGe) on the substrate to thereby form a SiGe layer; growing silicon (Si) with a lattice constant less than a lattice constant of SiGe on the SiGe layer to thereby form a transformed Si layer; and implanting ions on the surface of the transformed Si layer, wherein, while growing of the SiGe layer, the SiGe layer is doped with impurity at a depth the ions are to be implanted. Accordingly, it is possible to manufacture a substrate with an excellent surface micro-roughness. Since a bonded substrate can be separated using low temperature heat treatment by interaction between implanted ions and impurity, it is possible to reduce manufacturing costs and facilitate an apparatus.

摘要翻译： 提供了一种制造应变绝缘体上硅（SSOI）衬底的方法，其可以通过使用低温热处理分离键合衬底来制造SSOI衬底。 该制造方法包括：提供基板; 在衬底上生长硅锗（SiGe），从而形成SiGe层; 在SiGe层上生长具有小于SiGe的晶格常数的晶格常数的硅（Si），从而形成转变的Si层; 以及在所转化的Si层的表面上注入离子，其中，当SiGe层生长时，SiGe层在要注入离子的深度掺杂有杂质。 因此，可以制造具有优异的表面微粗糙度的基板。 由于键合衬底可以通过使用注入离子和杂质之间的相互作用的低温热处理来分离，所以可以降低制造成本并促进设备。

公开(公告)号：US07906408B2

公开(公告)日：2011-03-15

申请号：US12195229

申请日：2008-08-20

申请人： In Kyum Kim ,  Suk June Kang ,  Hyung Sang Yuk

发明人： In Kyum Kim ,  Suk June Kang ,  Hyung Sang Yuk

IPC分类号： H01L21/30

CPC分类号： H01L21/76254

摘要： Provided is a method of manufacturing a strained silicon-on-insulator (SSOI) substrate that can manufacture an SSOI substrate by separating a bonded substrate using a low temperature heat treatment. The manufacturing method includes: providing a substrate; growing silicon germanium (SiGe) on the substrate to thereby form a SiGe layer; growing silicon (Si) with a lattice constant less than a lattice constant of SiGe on the SiGe layer to thereby form a transformed Si layer; and implanting ions on the surface of the transformed Si layer, wherein, while growing of the SiGe layer, the SiGe layer is doped with impurity at a depth the ions are to be implanted. Accordingly, it is possible to manufacture a substrate with an excellent surface micro-roughness. Since a bonded substrate can be separated using low temperature heat treatment by interaction between implanted ions and impurity, it is possible to reduce manufacturing costs and facilitate an apparatus.

摘要翻译： 提供了一种制造应变绝缘体上硅（SSOI）衬底的方法，其可以通过使用低温热处理分离键合衬底来制造SSOI衬底。 该制造方法包括：提供基板; 在衬底上生长硅锗（SiGe），从而形成SiGe层; 在SiGe层上生长具有小于SiGe的晶格常数的晶格常数的硅（Si），从而形成转变的Si层; 以及在所转化的Si层的表面上注入离子，其中，当SiGe层生长时，SiGe层在要注入离子的深度掺杂有杂质。 因此，可以制造具有优异的表面微粗糙度的基板。 由于键合衬底可以通过使用注入离子和杂质之间的相互作用的低温热处理来分离，所以可以降低制造成本并促进设备。