公开(公告)号：US20110181779A1

公开(公告)日：2011-07-28

申请号：US12814318

申请日：2010-06-11

Applicant: II-Yong PARK ,  Seong-Pyo HONG ,  Jae-Ho NA

Inventor： II-Yong PARK ,  Seong-Pyo HONG ,  Jae-Ho NA

IPC: H04N5/445

CPC classification number: H04N21/4725 ,  G06F17/3079 ,  G06F17/30811 ,  H04N21/44008

Abstract: A mobile terminal including a communication unit configured to communicate with an external server associated with the mobile terminal; a display unit configured to display a video; and a controller configured to receive a detection request signal requesting an object in the video be detected, to detect the object in the video upon receiving the detection request signal, to retrieve history timing information about when the object was detected in the displayed video, and to display the history timing information on the display unit.

Abstract translation: 一种移动终端，包括被配置为与与所述移动终端相关联的外部服务器进行通信的通信单元; 被配置为显示视频的显示单元; 以及控制器，被配置为接收请求检测到的视频中的对象的检测请求信号，以在接收到检测请求信号时检测视频中的对象，以检索关于在所显示的视频中检测到对象的历史定时信息，以及 以在显示单元上显示历史定时信息。

公开(公告)号：US06770529B2

公开(公告)日：2004-08-03

申请号：US10611502

申请日：2003-06-30

Applicant: Dae Woo Lee ,  Tae Moon Roh ,  II Yong Park ,  Yil Suk Yang ,  Jong Dae Kim

Inventor： Dae Woo Lee ,  Tae Moon Roh ,  II Yong Park ,  Yil Suk Yang ,  Jong Dae Kim

IPC: H01L218242

CPC classification number: H01L29/0634 ,  H01L29/7835

Abstract: The present invention provides an EDMOS (extended drain MOS) device having a lattice type drift region and a method of manufacturing the same. In the case of n channel EDMOS(nEDMOS), the drift region has a lattice structure in which an n lattice having a high concentration and a p lattice having a low concentration are alternately arranged. As a drain voltage is applied, a depletion layer is abruptly extended by a pn junction of the n lattice and the p lattice, so that the entire drift region is easily depleted. Therefore, a breakdown voltage of the device is increased, and an on resistance of the device is decreased due to the n lattice with high concentration.

Abstract translation: 本发明提供一种具有晶格型漂移区域的EDMOS（延伸漏极MOS）器件及其制造方法。 在n沟道EDMOS（nEDMOS）的情况下，漂移区域具有晶格结构，其中具有高浓度的n晶格和具有低浓度的p晶格交替排列。 当施加漏极电压时，耗尽层被n晶格和p晶格的pn结突然延伸，使得整个漂移区域容易耗尽。 因此，器件的击穿电压增加，并且由于具有高浓度的n晶格，器件的导通电阻降低。