公开(公告)号：US20190256986A1

公开(公告)日：2019-08-22

申请号：US16347458

申请日：2016-12-05

Applicant: INTERUNIVERSITY MICROELECTRONICS CENTRE ,  KURITA WATER INDUSTRIES LTD.

Inventor： Nobuko GAN ,  Tatsuo NAGAI ,  Farid SEBAAI ,  Kurt WOSTYN

IPC: C23G1/10 ,  B08B3/08 ,  H01L21/02

Abstract: In a step of washing Ge, SiGe or germanide layers in the production of semiconductor devices, resists or metal residues are efficiently removed through washing without dissolving Ge, SiGe or germanides. A sulfuric acid solution with a sulfuric acid concentration of 90 wt % or more and an oxidant concentration of 200 g/L or less is used as a washing liquid. Examples of the washing liquid include an electrolytic solution obtained by electrolysis of the sulfuric acid solution, a solution obtained by mixing hydrogen peroxide with the acid solution or a solution obtained by dissolving an ozone gas in the sulfuric acid solution. A treatment temperature during the washing is preferably 50° C. or less.