Characterization apparatus for characterizing scintillator material

    公开(公告)号:US10101471B2

    公开(公告)日:2018-10-16

    申请号:US15326685

    申请日:2015-07-10

    IPC分类号: G01T1/20 G01T1/202

    摘要: The invention relates to a characterization apparatus (1) for characterizing scintillator material (3) especially for a PET detector. A first radiation source (2) irradiates the scintillator material with first radiation (4) having a wavelength being smaller than 450 nm. Then, a second radiation source (5) irradiates the scintillator material with pulsed second radiation (6) having a wavelength being larger than 600 nm and having a pulse duration being equal to or smaller than 50 s, wherein a detection device (9) detects third radiation (12) from the scintillator material (3) during and/or after the irradiation by the second radiation. The third radiation depends on the amount of charge carriers trapped at electronic defects of the scintillator material such that it can be used as an indicator for the amount of electronic defects and hence for characterizing the scintillator material. This characterization can be performed relatively fast and in a relatively simple way.

    CHARACTERIZATION APPARATUS FOR CHARACTERIZING SCINTILLATOR MATERIAL

    公开(公告)号:US20170205515A1

    公开(公告)日:2017-07-20

    申请号:US15326685

    申请日:2015-07-10

    IPC分类号: G01T1/202

    CPC分类号: G01T1/202

    摘要: The invention relates to a characterization apparatus (1) for characterizing scintillator material (3) especially for a PET detector. A first radiation source (2) irradiates the scintillator material with first radiation (4) having a wavelength being smaller than 450 nm. Then, a second radiation source (5) irradiates the scintillator material with pulsed second radiation (6) having a wavelength being larger than 600 nm and having a pulse duration being equal to or smaller than 50 s, wherein a detection device (9) detects third radiation (12) from the scintillator material (3) during and/or after the irradiation by the second radiation. The third radiation depends on the amount of charge carriers trapped at electronic defects of the scintillator material such that it can be used as an indicator for the amount of electronic defects and hence for characterizing the scintillator material. This characterization can be performed relatively fast and in a relatively simple way.