公开(公告)号：US20100224860A1

公开(公告)日：2010-09-09

申请号：US12782107

申请日：2010-05-18

Applicant: James P. IBBETSON ,  Bernd P. Keller ,  Umesh K. Mishra

Inventor： James P. IBBETSON ,  Bernd P. Keller ,  Umesh K. Mishra

IPC: H01L33/02 ,  H01L33/00 ,  H01L29/20 ,  H01L33/30

CPC classification number: H01L33/04 ,  H01L33/0016 ,  H01L33/08 ,  H01L33/32

Abstract: An LED made from a wide band gap semiconductor material and having a low resistance p-type confinement layer with a tunnel junction in a wide band gap semiconductor device is disclosed. A dissimilar material is placed at the tunnel junction where the material generates a natural dipole. This natural dipole is used to form a junction having a tunnel width that is smaller than such a width would be without the dissimilar material. A low resistance p-type confinement layer having a tunnel junction in a wide band gap semiconductor device may be fabricated by generating a polarization charge in the junction of the confinement layer, and forming a tunnel width in the junction that is smaller than the width would be without the polarization charge. Tunneling through the tunnel junction in the confinement layer may be enhanced by the addition of impurities within the junction. These impurities may form band gap states in the junction.

Abstract translation: 公开了一种由宽带隙半导体材料制成的LED，并具有在宽带隙半导体器件中具有隧道结的低电阻p型约束层。 不同的材料放置在材料产生天然偶极子的隧道结处。 该天然偶极子用于形成隧道宽度小于不具有不同材料的宽度的接合点。 在宽带隙半导体器件中具有隧道结的低电阻p型限制层可以通过在限制层的接合处产生极化电荷并在接合部中形成小于宽度的隧道宽度来制造 没有极化电荷。 可以通过在连接处添加杂质来增强通过限制层中的隧道结的隧穿。 这些杂质可能在结中形成带隙状态。

公开(公告)号：US08124957B2

公开(公告)日：2012-02-28

申请号：US11360166

申请日：2006-02-22

Applicant: James P. Ibbetson ,  Bernd P. Keller ,  Umesh K. Mishra

Inventor： James P. Ibbetson ,  Bernd P. Keller ,  Umesh K. Mishra

IPC: H01L29/06

CPC classification number: H01L29/205 ,  H01L29/2003 ,  H01L29/88

Abstract: A low resistance tunnel junction that uses a natural polarization dipole associated with dissimilar materials to align a conduction band to a valence band is disclosed. Aligning the conduction band to the valence band of the junction encourages tunneling across the junction. The tunneling is encouraged, because the dipole space charge bends the energy bands, and shortens a tunnel junction width charge carriers must traverse to tunnel across the junction. Placing impurities within or near the tunnel junction that may form deep states in the junction may also encourage tunneling in a tunnel junction. These states shorten the distance charge carriers must traverse across the tunnel junction.

Abstract translation: 公开了一种低电阻隧道结，其使用与不同材料相关联的自然极化偶极子将导带与价带对准。 将导带与结点的价带对准，促进穿越结的隧穿。 鼓励隧道，因为偶极空间电荷弯曲能带，并缩短隧道结宽度，电荷载流子必须穿过穿越交界处的隧道。 将杂质置于隧道结内或其附近可能形成深交界处的深部状态也可能鼓励在隧道结中隧道。 这些状态缩短了电荷载体必须穿过隧道结的距离。

公开(公告)号：US08324637B2

公开(公告)日：2012-12-04

申请号：US12782107

申请日：2010-05-18

Applicant: James P. Ibbetson ,  Bernd P. Keller ,  Umesh K. Mishra

Inventor： James P. Ibbetson ,  Bernd P. Keller ,  Umesh K. Mishra

IPC: H01L27/15

CPC classification number: H01L33/04 ,  H01L33/0016 ,  H01L33/08 ,  H01L33/32

Abstract: An LED made from a wide band gap semiconductor material and having a low resistance p-type confinement layer with a tunnel junction in a wide band gap semiconductor device is disclosed. A dissimilar material is placed at the tunnel junction where the material generates a natural dipole. This natural dipole is used to form a junction having a tunnel width that is smaller than such a width would be without the dissimilar material. A low resistance p-type confinement layer having a tunnel junction in a wide band gap semiconductor device may be fabricated by generating a polarization charge in the junction of the confinement layer, and forming a tunnel width in the junction that is smaller than the width would be without the polarization charge. Tunneling through the tunnel junction in the confinement layer may be enhanced by the addition of impurities within the junction. These impurities may form band gap states in the junction.

Abstract translation: 公开了一种由宽带隙半导体材料制成的LED，并具有在宽带隙半导体器件中具有隧道结的低电阻p型约束层。 不同的材料放置在材料产生天然偶极子的隧道结处。 该天然偶极子用于形成隧道宽度小于不具有不同材料的宽度的接合点。 在宽带隙半导体器件中具有隧道结的低电阻p型限制层可以通过在限制层的接合处产生极化电荷并在接合部中形成小于宽度的隧道宽度来制造 没有极化电荷。 可以通过在连接处添加杂质来增强通过限制层中的隧道结的隧穿。 这些杂质可能在结中形成带隙状态。

公开(公告)号：US07737451B2

公开(公告)日：2010-06-15

申请号：US11362472

申请日：2006-02-23

Applicant: James P. Ibbetson ,  Bernd P. Keller ,  Umesh K. Mishra

Inventor： James P. Ibbetson ,  Bernd P. Keller ,  Umesh K. Mishra

IPC: H01L29/267

CPC classification number: H01L33/04 ,  H01L33/0016 ,  H01L33/08 ,  H01L33/32

Abstract: An LED made from a wide band gap semiconductor material and having a low resistance p-type confinement layer with a tunnel junction in a wide band gap semiconductor device is disclosed. A dissimilar material is placed at the tunnel junction where the material generates a natural dipole. This natural dipole is used to form a junction having a tunnel width that is smaller than such a width would be without the dissimilar material. A low resistance p-type confinement layer having a tunnel junction in a wide band gap semiconductor device may be fabricated by generating a polarization charge in the junction of the confinement layer, and forming a tunnel width in the junction that is smaller than the width would be without the polarization charge. Tunneling through the tunnel junction in the confinement layer may be enhanced by the addition of impurities within the junction. These impurities may form band gap states in the junction.

Abstract translation: 公开了一种由宽带隙半导体材料制成的LED，并具有在宽带隙半导体器件中具有隧道结的低电阻p型约束层。 不同的材料放置在材料产生天然偶极子的隧道结处。 该天然偶极子用于形成隧道宽度小于不具有不同材料的宽度的接合点。 在宽带隙半导体器件中具有隧道结的低电阻p型限制层可以通过在限制层的接合处产生极化电荷并在接合部中形成小于宽度的隧道宽度来制造 没有极化电荷。 可以通过在连接处添加杂质来增强通过限制层中的隧道结的隧穿。 这些杂质可能在结中形成带隙状态。