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公开(公告)号：US20090221112A1
公开(公告)日：2009-09-03
申请号：US12399268
申请日：2009-03-06
IPC分类号： H01L21/60
CPC分类号： H01L31/022425 , Y02E10/50
摘要： The present invention relates to a method for metallizing semiconductor components in which aluminium is used. In particular in the case of products in which the process costs play a big part, such as e.g. solar cells based on silicon, a cost advantage can be achieved with the invention. In addition, the present invention relates to the use of the method, for example in the production of solar cells.
摘要翻译： 本发明涉及一种金属化其中使用铝的半导体元件的方法。 特别是在过程成本占很大比例的产品的情况下，例如， 基于硅的太阳能电池，本发明可以实现成本优势。 此外，本发明涉及该方法的用途，例如在太阳能电池的制造中。
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公开(公告)号：US08828790B2
公开(公告)日：2014-09-09
申请号：US13061158
申请日：2009-08-20
申请人： Ralf Preu , Andreas Grohe , Daniel Biro , Jochen Rentsch , Marc Hofmann , Jan-Frederik Nekarda , Andreas Wolf
发明人： Ralf Preu , Andreas Grohe , Daniel Biro , Jochen Rentsch , Marc Hofmann , Jan-Frederik Nekarda , Andreas Wolf
IPC分类号： H01L21/00 , H01L31/18 , H01L21/225 , H01L31/0224
CPC分类号： H01L31/022425 , H01L21/2254 , H01L31/18 , Y02E10/50 , Y02E10/52
摘要： A method for local contacting and local doping of a semiconductor layer including the following process steps: A) Generation of a layer structure on the semiconductor layer through i) application of at least one intermediate layer on one side of the semiconductor layer, and ii) application of at least one metal layer onto the intermediate layer last applied in step i), wherein the metal layer at least partly covers the last applied intermediate layer, B) Local heating of the layer structure in such a manner that in a local region a short-time melt-mixture of at least partial regions of at least the layers: metal layer, intermediate layer and semiconductor layer, forms. After solidification of the melt-mixture, a contacting is created between metal layer and semiconductor layer. It is essential that in step A) i) at least one intermediate layer designed as dopant layer is applied, which contains a dopant wherein the dopant has a greater solubility in the semiconductor layer than the metal of the metal layer.
摘要翻译： 一种半导体层的局部接触和局部掺杂的方法，包括以下工艺步骤：A）通过在半导体层的一侧上施加至少一个中间层，在半导体层上产生层结构，以及ii） 在步骤i）中最后施加至少一个金属层到中间层上，其中金属层至少部分地覆盖最后施加的中间层，B）层结构的局部加热，使得在局部区域a 形成至少两层以上金属层，中间层和半导体层的至少部分区域的短时熔融混合物。 在熔融混合物固化之后，在金属层和半导体层之间形成接触。 重要的是，在步骤A）中，i）施加设计为掺杂剂层的至少一个中间层，其包含掺杂剂，其中掺杂剂在半导体层中比金属层的金属具有更大的溶解度。
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公开(公告)号：US20110233711A1
公开(公告)日：2011-09-29
申请号：US13061158
申请日：2009-08-20
申请人： Ralf Preu , Andreas Grohe , Daniel Biro , Jochen Rentsch , Marc Hofmann , Jan-Frederik Nekarda , Andreas Wolf
发明人： Ralf Preu , Andreas Grohe , Daniel Biro , Jochen Rentsch , Marc Hofmann , Jan-Frederik Nekarda , Andreas Wolf
CPC分类号： H01L31/022425 , H01L21/2254 , H01L31/18 , Y02E10/50 , Y02E10/52
摘要： A method for local contacting and local doping of a semiconductor layer including the following process steps: A) Generation of a layer structure on the semiconductor layer through i) application of at least one intermediate layer on one side of the semiconductor layer, and ii) application of at least one metal layer onto the intermediate layer last applied in step i), wherein the metal layer at least partly covers the last applied intermediate layer, B) Local heating of the layer structure in such a manner that in a local region a short-time melt-mixture of at least partial regions of at least the layers: metal layer, intermediate layer and semiconductor layer, forms. After solidification of the melt-mixture, a contacting is created between metal layer and semiconductor layer. It is essential that in step A) i) at least one intermediate layer designed as dopant layer is applied, which contains a dopant wherein the dopant has a greater solubility in the semiconductor layer than the metal of the metal layer.
摘要翻译： 一种半导体层的局部接触和局部掺杂的方法，包括以下工艺步骤：A）通过在半导体层的一侧上施加至少一个中间层，在半导体层上产生层结构，以及ii） 在步骤i）中最后施加至少一个金属层到中间层上，其中金属层至少部分地覆盖最后施加的中间层，B）层结构的局部加热，使得在局部区域a 形成至少两层以上金属层，中间层和半导体层的至少部分区域的短时熔融混合物。 在熔融混合物固化之后，在金属层和半导体层之间形成接触。 重要的是，在步骤A）中，i）施加设计为掺杂剂层的至少一个中间层，其包含掺杂剂，其中掺杂剂在半导体层中比金属层的金属具有更大的溶解度。
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公开(公告)号：US08003530B2
公开(公告)日：2011-08-23
申请号：US12399268
申请日：2009-03-06
IPC分类号： H01L21/44
CPC分类号： H01L31/022425 , Y02E10/50
摘要： The present invention relates to a method for metallizing semiconductor components in which aluminium is used. In particular in the case of products in which the process costs play a big part, such as e.g. solar cells based on silicon, a cost advantage can be achieved with the invention. In addition, the present invention relates to the use of the method, for example in the production of solar cells.
摘要翻译： 本发明涉及一种金属化其中使用铝的半导体元件的方法。 特别是在过程成本占很大比例的产品的情况下，例如， 基于硅的太阳能电池，本发明可以实现成本优势。 此外，本发明涉及该方法的用途，例如在太阳能电池的制造中。
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