公开(公告)号：US06734514B2

公开(公告)日：2004-05-11

申请号：US10374656

申请日：2003-02-26

Applicant: Jean-Louis Robert ,  Julien Pernot ,  Jean Camassel ,  Sylvie Contreras

Inventor： Jean-Louis Robert ,  Julien Pernot ,  Jean Camassel ,  Sylvie Contreras

IPC: H01L2982

CPC classification number: G01R33/07 ,  H01L43/065

Abstract: A metrological Hall effect sensor with sensitivity to temperature less than 250 ppm/° C. and with high Hall effect coefficient for temperatures greater than 200° C. formed in a multilayer structure comprising a thin active layer deposited on a substrate, wherein the substrate is made of monocrystalline silicon carbide (SiC), and wherein the thin active layer is made of a weakly type n-doped silicon carbide (SiC) semiconductor in the exhaustion regime.

Abstract translation: 一种计量霍尔效应传感器，其温度低于250ppm /℃，对于大于200℃的温度具有较高的霍尔效应系数，其形成于多层结构中，该多层结构包括沉积在基底上的薄的活性层，其中基底为 由单晶碳化硅（SiC）制成，并且其中薄的有源层在耗尽状态下由弱型n掺杂碳化硅（SiC）半导体制成。