公开(公告)号：US20060102870A1

公开(公告)日：2006-05-18

申请号：US11252140

申请日：2005-10-17

申请人： Jean Viens ,  Juejun Hu ,  Fernand Viens ,  Anuradha Agarwal ,  Lionel Kimerling

发明人： Jean Viens ,  Juejun Hu ,  Fernand Viens ,  Anuradha Agarwal ,  Lionel Kimerling

IPC分类号： C04B35/00

CPC分类号： H01L31/0264 ,  H01L27/14625 ,  H01L27/14652 ,  H01L29/78681 ,  H01L31/0272

摘要： A thin film quaternary compound semiconductor comprising arsenic (As), selenium (Se), tellurium (Te) and copper (Cu) atoms with adjustable molar concentrations during processing, whose atomic arrangement is predominantly amorphous, glassy or polycrystalline, and dominated by covalent chemical bonds between the said atoms. The amorphous nature of the atomic arrangement gives predominance to short range atomic order, eliminating the constraints of lattice constant mismatch and polarity mismatch with the substrate, which opens the way to wide chemical compositional adjustments and to lower-cost deposition processes such as thermal evaporation or sputtering.

摘要翻译： 包含砷（As），硒（Se），碲（Te）和铜（Cu）原子的薄膜季铵化合物半导体，其加工过程中的摩尔浓度可调，其原子排列主要为无定形，玻璃状或多晶，并以共价化学 所述原子之间的键。 原子排列的无定形性给出了短程原子序列的优势，消除了晶格常数不匹配和与衬底的极性失配的约束，这开辟了广泛的化学成分调整和较低成本的沉积工艺，如热蒸发或 溅射。

公开(公告)号：US20060091284A1

公开(公告)日：2006-05-04

申请号：US11251955

申请日：2005-10-17

申请人： Jean Viens ,  Anuradha Agarwal ,  Lionel Kimerling

发明人： Jean Viens ,  Anuradha Agarwal ,  Lionel Kimerling

IPC分类号： G01J1/20 ,  G01J5/00

CPC分类号： H01L31/0264 ,  H01L27/14625 ,  H01L27/14652 ,  H01L29/78681 ,  H01L31/0272

摘要： A novel detection pixel micro-structure allowing the simultaneous and continuous detection of several discrete optical frequencies. A focal plane array comprises a plurality of multi-spectral detection pixels and a connecting platform to electrically connect the pixels. Each of the multi-spectral detection pixels form a resonant optical structure that comprises at least two periodic latticed dielectric reflectors, and at least one optical cavity between the said latticed dielectric reflectors. The latticed dielectric reflectors create a plurality of photonic bandgaps in the spectral response of the pixel. In addition, each optical cavity of the pixel comprises at least two optical resonant modes, corresponding to localized Bloch modes supported by the pixel dielectric structure, wherein each optical resonant mode is localized maximally at, and minimally away from, the optical cavity.