公开(公告)号：US06316277B1

公开(公告)日：2001-11-13

申请号：US09580612

申请日：2000-05-30

申请人： Khoi A. Phan ,  Christopher F. Lyons ,  Khanh B. Nguyen ,  Jeff Schefske

发明人： Khoi A. Phan ,  Christopher F. Lyons ,  Khanh B. Nguyen ,  Jeff Schefske

IPC分类号： H01L2166

CPC分类号： H01L22/24

摘要： There is provided a method for enhancing the contrast between oxide film and ultra-thin resists in deep-ultraviolet lithography for use with a wafer defect inspection system in order to maximize defect inspection sensitivity. This is achieved by varying the thickness of the oxide film for a given ultra-thin resist thickness so as to produce a high contrast. As a result, defect inspection of the ultra-thin resist pattern is easily obtained. In a second embodiment, the ultra-thin resist thickness is varied for a given oxide film thickness. In a third embodiment, both the oxide film and the ultra-thin resist thicknesses are varied simultaneously so as to obtain an optimum contrast.

摘要翻译： 提供了一种用于在深紫外线光刻中增强氧化膜和超薄抗蚀剂之间的对比度以与晶片缺陷检查系统一起使用以便最大化缺陷检查灵敏度的方法。 这是通过改变给定的超薄抗蚀剂厚度的氧化膜的厚度来实现的，以产生高对比度。 结果，容易获得超薄抗蚀剂图案的缺陷检查。 在第二实施例中，对于给定的氧化膜厚度，超薄抗蚀剂厚度是变化的。 在第三实施例中，氧化膜和超薄抗蚀剂厚度同时变化，以获得最佳对比度。