公开(公告)号：US20100310860A1

公开(公告)日：2010-12-09

申请号：US12745276

申请日：2008-02-28

申请人： Yeon Gil Jung ,  Sang Won Myoung ,  Ji Hun Kang ,  Jeong-Pyo Kim

发明人： Yeon Gil Jung ,  Sang Won Myoung ,  Ji Hun Kang ,  Jeong-Pyo Kim

IPC分类号： B32B9/00 ,  C23C16/32 ,  C23C16/34

CPC分类号： C04B41/87 ,  C04B35/14 ,  C04B35/522 ,  C04B35/565 ,  C04B41/009 ,  C04B41/5059 ,  Y10T428/26 ,  C04B41/4529 ,  C04B41/4556 ,  C04B41/5066

摘要： A method of forming an SiC or SiC/Si3N4 coating layer on a bare graphite substrate via a solid-vapor process is disclosed. Synthesis of the SiC coating layer on the graphite substrate is accomplished by reaction of SiO vapor and carbon (C) of the graphite, and that of the SiC/Si3N4 coating layer is accomplished by reaction of SiO vapor, N2 and C of the graphite. Thickness of the SiC coating layer is affected by porosity of the graphite substrate, reaction temperature, and dwell time. By controlling the reaction temperature, hardness of the SiC coating may be increased to 10-15 times that of the bare graphite substrate. The SiC/Si3N4 coating is much thinner than the SiC coating and has a higher surface hardness. Thermal oxidation tests show that the SiC or SiC/Si3N4 coated substrate exhibits improved oxidation resistance over bare substrates. In particular, the SiC/Si3N4 coated substrate shows outstanding resistance to thermal oxidation.

摘要翻译： 公开了通过固体蒸气法在裸石墨基底上形成SiC或SiC / Si 3 N 4涂层的方法。 石墨基体上的SiC涂层的合成是通过SiO蒸气和石墨碳（C）的反应而完成的，SiC / Si 3 N 4涂层的合成通过石墨的SiO蒸气，N 2和C的反应来实现。 SiC涂层的厚度受石墨基体的孔隙率，反应温度和停留时间的影响。 通过控制反应温度，SiC涂层的硬度可以提高到裸石墨基材的10-15倍。 SiC / Si3N4涂层比SiC涂层薄得多，表面硬度更高。 热氧化试验表明，SiC或SiC / Si3N4涂覆的基材在裸基材上表现出改善的抗氧化性能。 特别地，SiC / Si3N4涂覆的基材显示出优异的耐热氧化性。