公开(公告)号：US07714386B2

公开(公告)日：2010-05-11

申请号：US11449758

申请日：2006-06-09

Applicant: Aaron Anthony Pesetski ,  Hong Zhang ,  John Douglas Adam ,  John Przybysz ,  Jim Murduck ,  Norman Goldstein ,  James Baumgardner

Inventor： Aaron Anthony Pesetski ,  Hong Zhang ,  John Douglas Adam ,  John Przybysz ,  Jim Murduck ,  Norman Goldstein ,  James Baumgardner

IPC: H01L27/01

CPC classification number: H01L51/0048 ,  B82Y10/00 ,  H01L51/0554 ,  H01L51/0558

Abstract: A carbon nanotube field effect transistor includes a substrate, a source electrode, a drain electrode and a carbon nanotube. The carbon nanotube forms a channel between the source electrode and the drain electrode. The carbon nanotube field effect transistor also includes a gate dielectric and a gate electrode. The gate electrode is separated from the carbon nanotube by the gate dielectric, and an input radio frequency voltage is applied to the gate electrode.

Abstract translation: 碳纳米管场效应晶体管包括基板，源电极，漏电极和碳纳米管。 碳纳米管在源电极和漏电极之间形成通道。 碳纳米管场效应晶体管还包括栅极电介质和栅电极。 栅电极通过栅极电介质与碳纳米管分离，并且将输入射频电压施加到栅电极。

公开(公告)号：US20090224230A1

公开(公告)日：2009-09-10

申请号：US11449758

申请日：2006-06-09

Applicant: Aaron Anthony Pesetski ,  Hong Zhang ,  John Douglas Adam ,  John Przybysz ,  Jim Murduck ,  Norman Goldstein ,  James Baumgardner

Inventor： Aaron Anthony Pesetski ,  Hong Zhang ,  John Douglas Adam ,  John Przybysz ,  Jim Murduck ,  Norman Goldstein ,  James Baumgardner

IPC: H01L29/66 ,  H01L29/786

CPC classification number: H01L51/0048 ,  B82Y10/00 ,  H01L51/0554 ,  H01L51/0558

Abstract: A carbon nanotube field effect transistor includes a substrate, a source electrode, a drain electrode and a carbon nanotube. The carbon nanotube forms a channel between the source electrode and the drain electrode. The carbon nanotube field effect transistor also includes a gate dielectric and a gate electrode. The gate electrode is separated from the carbon nanotube by the gate dielectric, and an input radio frequency voltage is applied to the gate electrode.

Abstract translation: 碳纳米管场效应晶体管包括基板，源电极，漏电极和碳纳米管。 碳纳米管在源电极和漏电极之间形成通道。 碳纳米管场效应晶体管还包括栅极电介质和栅电极。 栅电极通过栅极电介质与碳纳米管分离，并且将输入射频电压施加到栅电极。