公开(公告)号：US07221253B2

公开(公告)日：2007-05-22

申请号：US10519692

申请日：2002-07-09

Applicant: Young Sun Kim ,  Doo Won Kang ,  Gyu Jin Ahn ,  Jin Seok Noh

Inventor： Young Sun Kim ,  Doo Won Kang ,  Gyu Jin Ahn ,  Jin Seok Noh

IPC: H01C7/10

CPC classification number: H01C7/13

Abstract: A fusible resistor and method of fabricating the same is provided. The fusible resistor has a very low resistance of 20 to 470 mΩ. by depositing thin films as a fusible element made of a material with low resistivity such as copper having a temperature coefficient of over 2,000 ppm/° C. The fusible resistor comprises a resistor body, a fusible element layer formed to surround the resistor body, caps formed to surround ends of the fusible element layer, lead wires attached to the caps, and an insulating layer for insulating the fusible element layer and the caps from outside. The thus-fabricated fusible resistor performs all functions of a use without generating excessive heat.

Abstract translation: 提供了一种可熔电阻器及其制造方法。 熔断电阻的阻值非常低，为20至470 mOmega。 通过沉积薄膜作为由具有低电阻率的材料制成的可熔元件，例如具有超过2000ppm /℃的温度系数的铜。可熔电阻器包括电阻体，形成为围绕电阻体的易熔元件层，帽 形成为围绕可熔元件层的端部，附接到盖的引线以及用于将可熔元件层和盖从外部绝缘的绝缘层。 如此制造的可熔电阻器执行所有使用功能而不产生过多的热量。