公开(公告)号：US20070066508A1

公开(公告)日：2007-03-22

申请号：US11436749

申请日：2006-05-18

申请人： Chien Chen ,  Wen Liu ,  Jing-Chiuan Shiue ,  Teng Huo

发明人： Chien Chen ,  Wen Liu ,  Jing-Chiuan Shiue ,  Teng Huo

IPC分类号： C11D3/37

CPC分类号： C11D11/0047 ,  C11D7/3218 ,  C11D7/3281

摘要： The invention relates to an aqueous cleaning composition for wafers with copper wires that have been treated by chemical mechanical planarization in an integrated circuit processing, comprising 0.1 to 15 wt % of a nitrogen-containing heterocyclic organic base, 0.1 to 35 wt % of an alcohol amine and water. Upon contact with copper-containing semiconductor wafers that have been treated by chemical mechanical planarization for an effective period of time, the aqueous cleaning composition can effectively remove residual contaminants from the surfaces of the wafers, and simultaneously provide the copper-containing semiconductor wafers with a better surface roughness.

摘要翻译： 本发明涉及在集成电路加工中通过化学机械平面化处理的具有铜线的晶片的水性清洁组合物，其包含0.1至15重量％的含氮杂环有机碱，0.1至35重量％的醇 胺和水。 在通过化学机械平面化处理有效时间的含铜半导体晶片接触之后，水性清洁组合物可以有效地从晶片表面去除残留的污染物，同时向含铜半导体晶片提供 更好的表面粗糙度。

公开(公告)号：US08063006B2

公开(公告)日：2011-11-22

申请号：US11436749

申请日：2006-05-18

申请人： Chien Ching Chen ,  Wen Cheng Liu ,  Jing-Chiuan Shiue ,  Teng Yan Huo

发明人： Chien Ching Chen ,  Wen Cheng Liu ,  Jing-Chiuan Shiue ,  Teng Yan Huo

IPC分类号： C11D1/00

CPC分类号： C11D11/0047 ,  C11D7/3218 ,  C11D7/3281

摘要： The invention relates to an aqueous cleaning composition for wafers with copper wires that have been treated by chemical mechanical planarization in an integrated circuit processing, comprising 0.1 to 15 wt % of a nitrogen-containing heterocyclic organic base, 0.1 to 35 wt % of an alcohol amine and water. Upon contact with copper-containing semiconductor wafers that have been treated by chemical mechanical planarization for an effective period of time, the aqueous cleaning composition can effectively remove residual contaminants from the surfaces of the wafers, and simultaneously provide the copper-containing semiconductor wafers with a better surface roughness.

摘要翻译： 本发明涉及在集成电路加工中通过化学机械平面化处理的具有铜线的晶片的水性清洁组合物，其包含0.1至15重量％的含氮杂环有机碱，0.1至35重量％的醇 胺和水。 在通过化学机械平面化处理有效时间的含铜半导体晶片接触之后，水性清洁组合物可以有效地从晶片表面去除残留的污染物，同时向含铜半导体晶片提供 更好的表面粗糙度。