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公开(公告)号:US06218733B1
公开(公告)日:2001-04-17
申请号:US08254854
申请日:1994-06-06
IPC分类号: H01L2348
CPC分类号: H01L21/76852 , H01L21/32051 , H01L21/321 , H01L21/76843 , H01L21/76846 , H01L21/76867 , H01L21/76886 , H01L23/53223 , H01L2924/0002 , Y10S257/915 , H01L2924/00
摘要: The present invention includes a process for forming an intermetallic layer and a device formed by the process. The process includes a reaction step where a metal-containing layer reacts with a metal-containing gas, wherein the metals of the layer and gas are different. In one embodiment of the present invention, titanium aluminide may be formed on the sides of an interconnect. The process may be performed in a variety of equipment, such as a furnace, a rapid thermal processor, a plasma etcher, and a sputter deposition machine. The reaction to form the intermetallic layer is typically performed while the substrate is at a temperature no more than 700 degrees Celsius.
摘要翻译: 本发明包括形成金属间化合物的方法和通过该方法形成的装置。 该方法包括其中含金属层与含金属气体反应的反应步骤,其中该层和气体的金属是不同的。 在本发明的一个实施方案中,可以在互连的侧面上形成铝化铝。 该方法可以在各种设备中进行,例如炉,快速热处理器,等离子体蚀刻器和溅射沉积机。 形成金属间化合物的反应通常在基板处于不超过700摄氏度的温度下进行。