公开(公告)号：US20080277651A1

公开(公告)日：2008-11-13

申请号：US11877853

申请日：2007-10-24

Applicant: Jun-Rong Chen ,  Heng-Tien Lin ,  Jui-Fen Fan ,  Gue-Wuu Hwang ,  Ching Ting ,  Yi-Jen Chan

Inventor： Jun-Rong Chen ,  Heng-Tien Lin ,  Jui-Fen Fan ,  Gue-Wuu Hwang ,  Ching Ting ,  Yi-Jen Chan

IPC: H01L51/00

CPC classification number: H01L51/0575 ,  G11C13/0014 ,  G11C13/0016 ,  H01L51/0591

Abstract: Disclosed is an organic non-volatile memory (ONVM) material including nanoparticles evenly dispersed in a first polymer. The nanoparticles have a metal core covered by a second polymer to form a core/shell structure, and the first polymer has a higher polymerization degree and molecular weight than the second polymer. The ONVM material of the invention has high uniformity, thereby stabilizing the electric properties of the memory device, such as increasing rewrite counts, increasing data retention time, reducing driving voltage, reducing write current, and enhancing current on/off ratio.

Abstract translation: 公开了一种有机非挥发性记忆（ONVM）材料，其包括均匀分散在第一聚合物中的纳米颗粒。 纳米颗粒具有由第二聚合物覆盖以形成核/壳结构的金属芯，并且第一聚合物具有比第二聚合物更高的聚合度和分子量。 本发明的ONVM材料具有高均匀性，从而稳定存储器件的电性能，例如增加重写计数，增加数据保持时间，降低驱动电压，减少写入电流和增强电流开/关比。

公开(公告)号：US07629607B2

公开(公告)日：2009-12-08

申请号：US11877853

申请日：2007-10-24

Applicant: Jun-Rong Chen ,  Heng-Tien Lin ,  Jui-Fen Fan ,  Gue-Wuu Hwang ,  Ching Ting ,  Yi-Jen Chan

Inventor： Jun-Rong Chen ,  Heng-Tien Lin ,  Jui-Fen Fan ,  Gue-Wuu Hwang ,  Ching Ting ,  Yi-Jen Chan

IPC: G11C11/00

CPC classification number: H01L51/0575 ,  G11C13/0014 ,  G11C13/0016 ,  H01L51/0591

Abstract: Disclosed is an organic non-volatile memory (ONVM) material including nanoparticles evenly dispersed in a first polymer. The nanoparticles have a metal core covered by a second polymer to form a core/shell structure, and the first polymer has a higher polymerization degree and molecular weight than the second polymer. The ONVM material of the invention has high uniformity, thereby stabilizing the electric properties of the memory device, such as increasing rewrite counts, increasing data retention time, reducing driving voltage, reducing write current, and enhancing current on/off ratio.

Abstract translation: 公开了一种有机非挥发性记忆（ONVM）材料，其包括均匀分散在第一聚合物中的纳米颗粒。 纳米颗粒具有由第二聚合物覆盖以形成核/壳结构的金属芯，并且第一聚合物具有比第二聚合物更高的聚合度和分子量。 本发明的ONVM材料具有高均匀性，从而稳定存储器件的电性能，例如增加重写计数，增加数据保持时间，降低驱动电压，减少写入电流和增强电流开/关比。