公开(公告)号：US09499924B2

公开(公告)日：2016-11-22

申请号：US14236977

申请日：2012-08-02

申请人： Akihiro Kimura ,  Kiyotaka Takano ,  Junya Tokue

发明人： Akihiro Kimura ,  Kiyotaka Takano ,  Junya Tokue

IPC分类号： C30B15/10 ,  C30B15/22 ,  C30B15/00 ,  C30B29/06

CPC分类号： C30B15/22 ,  C30B15/00 ,  C30B15/10 ,  C30B29/06

摘要： There is provided a method for manufacturing a silicon single crystal, the method includes: a raw material melting step of melting polycrystalline silicon accommodated in a crucible to obtain a silicon melt; and bringing a seed crystal into contact with the silicon melt and pulling up the seed crystal to grow the silicon single crystal, wherein, after the raw material melting step and before the pulling step, there are performed: a cristobalitizing step of leaving the silicon melt at a predetermined number of rotations of the crucible with a predetermined gas flow rate and a predetermined furnace pressure to generate cristobalite while applying a magnetic field; and a dissolving step of partially dissolving the cristobalite by carrying out any one of an increase in number of rotations of the crucible, an increase in gas flow rate, and a reduction in furnace pressure beyond counterpart figures in the cristobalitizing step.

摘要翻译： 提供一种制造单晶硅的方法，该方法包括：将容纳在坩埚中的多晶硅熔化以获得硅熔体的原料熔化步骤; 并使晶种与硅熔体接触并拉出晶种以生长硅单晶，其中在原料熔化步骤之后和拉制步骤之前，进行：将硅熔体离开的方圆化步骤 以规定的气体流量和规定的炉压进行坩埚的预定转数，以施加磁场而产生方英石; 以及通过进行坩埚转数增加，气体流量增加和炉压力下降中的任何一个部分溶解方英石的溶解步骤，超过了对立图中的曲线图。

公开(公告)号：US20140174339A1

公开(公告)日：2014-06-26

申请号：US14236977

申请日：2012-08-02

申请人： Akihiro Kimura ,  Kiyotaka Takano ,  Junya Tokue

发明人： Akihiro Kimura ,  Kiyotaka Takano ,  Junya Tokue

IPC分类号： C30B15/22

CPC分类号： C30B15/22 ,  C30B15/00 ,  C30B15/10 ,  C30B29/06

摘要： There is provided a method for manufacturing a silicon single crystal, the method includes: a raw material melting step of melting polycrystalline silicon accommodated in a crucible to obtain a silicon melt; and bringing a seed crystal into contact with the silicon melt and pulling up the seed crystal to grow the silicon single crystal, wherein, after the raw material melting step and before the pulling step, there are performed: a cristobalitizing step of leaving the silicon melt at a predetermined number of rotations of the crucible with a predetermined gas flow rate and a predetermined furnace pressure to generate cristobalite while applying a magnetic field; and a dissolving step of partially dissolving the cristobalite by carrying out any one of an increase in number of rotations of the crucible, an increase in gas flow rate, and a reduction in furnace pressure beyond counterpart figures in the cristobalitizing step.

摘要翻译： 提供一种制造单晶硅的方法，该方法包括：将容纳在坩埚中的多晶硅熔化以获得硅熔体的原料熔化步骤; 并使晶种与硅熔体接触并拉出晶种以生长硅单晶，其中在原料熔化步骤之后和拉制步骤之前，进行：将硅熔体离开的方圆化步骤 以规定的气体流量和规定的炉压进行坩埚的预定转数，以施加磁场而产生方英石; 以及通过进行坩埚转数增加，气体流量增加和炉压力下降中的任何一个部分溶解方英石的溶解步骤，超过了对立图中的曲线图。