公开(公告)号：US20120204946A1

公开(公告)日：2012-08-16

申请号：US13371139

申请日：2012-02-10

申请人： Helge Haverkamp ,  Petra Mitzinneck ,  Kay Kieninger ,  Jurgen Sollner

发明人： Helge Haverkamp ,  Petra Mitzinneck ,  Kay Kieninger ,  Jurgen Sollner

IPC分类号： H01L31/0224 ,  H01L31/18

CPC分类号： H01L31/022425 ,  Y02E10/50

摘要： In a method for producing a front-side emitter electrode as front contact for a silicon solar cell on a silicon wafer, a depression is produced in the front side of said silicon wafer. A front-side n-doped silicon layer and an antireflection layer are then produced. A paste is then introduced into the depression, said paste containing electrically conductive metal particles and etching glass frit. Said paste, as a result of momentary heating, etches through the antireflection layer to the n-doped silicon layer making electrical contact with the latter. Afterwards, electrically conductive front contact metal is galvanically attached as front contact onto the heat-treated paste in the depression.

摘要翻译： 作为在硅晶片上的硅太阳能电池的正面接触的前侧发射电极的制造方法，在所述硅晶片的前侧产生凹陷。 然后制造前侧n掺杂硅层和抗反射层。 然后将糊剂引入凹陷中，所述糊剂含有导电金属颗粒并蚀刻玻璃料。 所述糊料作为瞬时加热的结果，通过防反射层蚀刻到与掺杂硅层电接触的n掺杂硅层。 之后，将导电性前接触金属作为前触点电连接到凹陷处的热处理糊料上。