公开(公告)号：US5635763A

公开(公告)日：1997-06-03

申请号：US215374

申请日：1994-03-21

申请人： Yasunori Inoue ,  Kazutoshi Tsujimura ,  Shinichi Tanimoto ,  Yasuhiko Yamashita ,  Kiyoshi Yoneda ,  Yoshikazu Ibara

发明人： Yasunori Inoue ,  Kazutoshi Tsujimura ,  Shinichi Tanimoto ,  Yasuhiko Yamashita ,  Kiyoshi Yoneda ,  Yoshikazu Ibara

IPC分类号： H01L23/532 ,  H01L23/48

CPC分类号： H01L23/53223 ,  H01L2924/0002

摘要： A semiconductor device is disclosed, which includes an insulating layer and an interconnection layer having a conductive layer provided over the insulating layer. The interconnection layer is patterned by photolithography. The device further includes a cap-metal layer, which is deposited on the conductive layer and suppresses reflection of light beams at the time of patterning the interconnection layer. The cap-metal layer has any one of the following structures: a double-layered structure having a titanium nitride layer and a titanium layer located between the titanium nitride layer and the conductive layer; a double-layered structure having a titanium nitride layer and an aluminum-titanium alloy layer located between the titanium nitride layer and the conductive layer; and a single-layered structure consisting essentially of an aluminum-titanium alloy. These design ensure accurate interconnection patterning in the photolithography, and provide improved EM and SM immunities of the interconnection.

摘要翻译： 公开了一种半导体器件，其包括绝缘层和在绝缘层上设置有导电层的互连层。 通过光刻将互连层图案化。 该装置还包括帽形金属层，其沉积在导电层上并抑制在构图互连层时光束的反射。 帽金属层具有以下结构之一：具有氮化钛层和位于氮化钛层和导电层之间的钛层的双层结构; 具有氮化钛层和位于氮化钛层和导电层之间的铝 - 钛合金层的双层结构; 以及主要由铝 - 钛合金组成的单层结构。 这些设计确保在光刻中精确的互连图案化，并且提供互连的改善的EM和SM抗扰度。

公开(公告)号：US5895265A

公开(公告)日：1999-04-20

申请号：US821769

申请日：1997-03-20

申请人： Yasunori Inoue ,  Kazutoshi Tsujimura ,  Shinichi Tanimoto ,  Yasuhiko Yamashita ,  Kiyoshi Yoneda ,  Yoshikazu Ibara

发明人： Yasunori Inoue ,  Kazutoshi Tsujimura ,  Shinichi Tanimoto ,  Yasuhiko Yamashita ,  Kiyoshi Yoneda ,  Yoshikazu Ibara

IPC分类号： H01L23/532 ,  H01L21/44

CPC分类号： H01L23/53223 ,  H01L2924/0002

摘要： A semiconductor device includes an insulating layer and an interconnection layer having a conductive layer provided over the insulating layer. The interconnection layer is patterned by photolithography. The device further includes a cap-metal layer, which is deposited on the conductive layer and suppresses reflection of light beams at the time of patterning the interconnection layer. The cap-metal layer has any one of the following structures: a double-layered structure having a titanium nitride layer and a titanium layer located between the titanium nitride layer and the conductive layer; a double-layered structure having a titanium nitride layer and an aluminum-titanium alloy layer located between the titanium nitride layer and the conductive layer; and a single-layered structure consisting essentially of an aluminum-titanium alloy. These design ensure accurate interconnection patterning in the photolithography, and provide improved EM and SM immunities of the interconnection.

摘要翻译： 半导体器件包括绝缘层和具有设置在绝缘层上的导电层的互连层。 通过光刻将互连层图案化。 该装置还包括帽形金属层，其沉积在导电层上并抑制在构图互连层时光束的反射。 帽金属层具有以下结构之一：具有氮化钛层和位于氮化钛层和导电层之间的钛层的双层结构; 具有氮化钛层和位于氮化钛层和导电层之间的铝 - 钛合金层的双层结构; 以及主要由铝 - 钛合金组成的单层结构。 这些设计确保在光刻中精确的互连图案化，并且提供互连的改善的EM和SM抗扰度。