DETERMINING HISTORY STATE OF DATA IN DATA RETAINING DEVICE BASED ON STATE OF PARTIALLY DEPLETED SILICON-ON-INSULATOR
    1.
    发明申请
    DETERMINING HISTORY STATE OF DATA IN DATA RETAINING DEVICE BASED ON STATE OF PARTIALLY DEPLETED SILICON-ON-INSULATOR 失效
    根据部分绝缘硅绝缘体的状态确定数据保留装置中数据的历史状态

    公开(公告)号:US20070242507A1

    公开(公告)日:2007-10-18

    申请号:US11279507

    申请日:2006-04-12

    IPC分类号: G11C11/34

    CPC分类号: G11C11/417

    摘要: A system, method and program product for determining a history state of data in a data retaining device are disclosed. A state of a partially-depleted silicon-on-insulator (PD SOI) device coupled to a data retaining device is measured to indicate a body voltage of the PD SOI device. The body voltage of the PD SOI device may indicate, among others, how long the PD SOI device has been idling, which indirectly indicates how long data in the data retaining device has not been accessed. As such, the current invention may be used efficiently with, e.g., a cache replacement algorithm in a management of the data retaining device.

    摘要翻译: 公开了一种用于确定数据保持装置中的数据的历史状态的系统,方法和程序产品。 耦合到数据保持装置的部分耗尽的绝缘体上硅(PD SOI)器件的状态被测量以指示PD SOI器件的体电压。 PD SOI器件的体电压可以指示PD SOI器件已经空转多长时间,这间接地指示数据保持器件中的数据未被访问多长时间。 因此,本发明可以在数据保留装置的管理中与例如高速缓存替换算法有效地使用。