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    Pattern correction method, exposure mask, manufacturing method of exposure mask, and manufacturing method of semiconductor device
    1.
    发明授权
    Pattern correction method, exposure mask, manufacturing method of exposure mask, and manufacturing method of semiconductor device 失效
    图案校正方法，曝光掩模，曝光掩模的制造方法以及半导体器件的制造方法

    公开(公告)号：US08221942B2

    公开(公告)日：2012-07-17

    申请号：US12688039

    申请日：2010-01-15

    申请人： Mikio Oka ,  Kaoru Koike ,  Kensuke Tsuchiya ,  Hidetoshi Ohnuma

    发明人： Mikio Oka ,  Kaoru Koike ,  Kensuke Tsuchiya ,  Hidetoshi Ohnuma

    IPC分类号： G03F1/76 ,  G03F5/00

    CPC分类号： H01L27/1104 ,  G03F1/36 ,  H01L27/11

    摘要： A pattern correction method includes: a correction step of performing pattern correction on a semiconductor circuit pattern having plural transistors as component elements; an order of priority recognition step of recognizing an order of priority set with respect to the plural transistors prior to the pattern correction at the correction step; and a condition adjustment step of adjusting correction conditions for the pattern correction with reference to the transistor having a high priority recognized at the order of priority recognition step in the pattern correction at the correction step.

    摘要翻译： 图案校正方法包括：对具有多个晶体管作为元件的半导体电路图案进行图案校正的校正步骤; 优先级识别步骤的顺序，在所述校正步骤中识别在所述图案校正之前相对于所述多个晶体管设定的优先级顺序; 以及条件调整步骤，参照在校正步骤中的图案校正中的以优先级识别步骤的顺序被识别的具有高优先级的晶体管来调整图案校正的校正条件。

    PATTERN CORRECTION METHOD, EXPOSURE MASK, MANUFACTURING METHOD OF EXPOSURE MASK, AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
    2.
    发明申请
    PATTERN CORRECTION METHOD, EXPOSURE MASK, MANUFACTURING METHOD OF EXPOSURE MASK, AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE 失效
    图案校正方法，曝光掩模，曝光掩模的制造方法和半导体器件的制造方法

    公开(公告)号：US20100183960A1

    公开(公告)日：2010-07-22

    申请号：US12688039

    申请日：2010-01-15

    申请人： Mikio Oka ,  Kaoru Koike ,  Kensuke Tsuchiya ,  Hidetoshi Ohnuma

    发明人： Mikio Oka ,  Kaoru Koike ,  Kensuke Tsuchiya ,  Hidetoshi Ohnuma

    IPC分类号： G03F1/00 ,  G03F7/20

    CPC分类号： H01L27/1104 ,  G03F1/36 ,  H01L27/11

    摘要： A pattern correction method includes: a correction step of performing pattern correction on a semiconductor circuit pattern having plural transistors as component elements; an order of priority recognition step of recognizing an order of priority set with respect to the plural transistors prior to the pattern correction at the correction step; and a condition adjustment step of adjusting correction conditions for the pattern correction with reference to the transistor having a high priority recognized at the order of priority recognition step in the pattern correction at the correction step.

    摘要翻译： 图案校正方法包括：对具有多个晶体管作为元件的半导体电路图案执行图案校正的校正步骤; 优先级识别步骤的顺序，在所述校正步骤中识别在所述图案校正之前相对于所述多个晶体管设定的优先级顺序; 以及条件调整步骤，参照在校正步骤中的图案校正中的以优先级识别步骤的顺序被识别的具有高优先级的晶体管来调整图案校正的校正条件。