公开(公告)号：US20050110113A1

公开(公告)日：2005-05-26

申请号：US10721578

申请日：2003-11-24

Applicant: Chih-Ming Lin ,  Kern-Hunt Ang ,  Chia-Chen Liu

Inventor： Chih-Ming Lin ,  Kern-Hunt Ang ,  Chia-Chen Liu

IPC: H01L23/525 ,  H01L29/00 ,  H01L21/326

CPC classification number: H01L23/5252 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An anti-fuse structure and a method for forming the anti-fuse structure employ a substrate having formed therein a contact region. A metal silicide layer is formed over and electrically connected with the contact region. A first doped polysilicon layer is formed upon the metal silicide layer. An anti-fuse material layer is formed upon the first doped polysilicon layer. A second doped polysilicon layer is formed upon the anti-fuse material layer. The first doped polysilicon layer and the second doped polysilicon layer may be formed with the same or complementary dopant polarity, the latter providing an anti-fuse diode.

Abstract translation: 抗熔丝结构和形成抗熔丝结构的方法采用在其中形成有接触区域的衬底。 金属硅化物层形成在接触区域上并与接触区域电连接。 在金属硅化物层上形成第一掺杂多晶硅层。 在第一掺杂多晶硅层上形成反熔丝材料层。 第二掺杂多晶硅层形成在反熔丝材料层上。 第一掺杂多晶硅层和第二掺杂多晶硅层可以以相同或互补的掺杂剂极性形成，后者提供反熔丝二极管。