公开(公告)号：US20080075138A1

公开(公告)日：2008-03-27

申请号：US11858313

申请日：2007-09-20

申请人： Sang-Wook WEE ,  Seung-Wook LEE ,  Ki-Man BAE ,  Kwang-Salk KIM

发明人： Sang-Wook WEE ,  Seung-Wook LEE ,  Ki-Man BAE ,  Kwang-Salk KIM

IPC分类号： G01N25/72 ,  G01N31/00

CPC分类号： G01N21/9501 ,  H01L22/24

摘要： Provided is a method of identifying crystal defect regions of monocrystalline silicon using metal contamination and heat treatment. In the method, a sample in the shape of a silicon wafer or a slice of monocrystalline silicon ingot is prepared. At least one side of the sample is contaminated with metal at a contamination concentration of about 1×1014 to 5×1016 atoms/cm2. The contaminated sample is heat-treated. The contaminated side or the opposite side of the heat-treated sample is observed to identify a crystal defect region. The crystal defect region can be analyzed accurately, easily and quickly without the use of an additional check device, without depending on the concentration of oxygen in the monocrystalline silicon.

摘要翻译： 提供了使用金属污染和热处理来识别单晶硅的晶体缺陷区域的方法。 在该方法中，制备硅晶片或单晶硅锭切片形状的样品。 样品的至少一侧被污染浓度约为1×10 14至5×10 16原子/ cm 2的金属污染。 污染的样品经过热处理。 观察热处理样品的污染侧或相反侧以识别晶体缺陷区域。 晶体缺陷区域可以在不依赖于单晶硅中的氧浓度的情况下，而不需要额外的检查装置，可以准确，容易和快速地分析。

公开(公告)号：US07901132B2

公开(公告)日：2011-03-08

申请号：US11858313

申请日：2007-09-20

申请人： Sang-Wook Wee ,  Seung-Wook Lee ,  Ki-Man Bae ,  Kwang-Salk Kim

发明人： Sang-Wook Wee ,  Seung-Wook Lee ,  Ki-Man Bae ,  Kwang-Salk Kim

IPC分类号： G01N25/72

CPC分类号： G01N21/9501 ,  H01L22/24

摘要： Provided is a method of identifying crystal defect regions of monocrystalline silicon using metal contamination and heat treatment. In the method, a sample in the shape of a silicon wafer or a slice of monocrystalline silicon ingot is prepared. At least one side of the sample is contaminated with metal at a contamination concentration of about 1×1014 to 5×1016 atoms/cm2. The contaminated sample is heat-treated. The contaminated side or the opposite side of the heat-treated sample is observed to identify a crystal defect region. The crystal defect region can be analyzed accurately, easily and quickly without the use of an additional check device, without depending on the concentration of oxygen in the monocrystalline silicon.

摘要翻译： 提供了使用金属污染和热处理来识别单晶硅的晶体缺陷区域的方法。 在该方法中，制备硅晶片或单晶硅锭切片形状的样品。 样品的至少一侧被污染浓度为1×1014至5×1016原子/ cm2的金属污染。 污染的样品经过热处理。 观察热处理样品的污染侧或相反侧以识别晶体缺陷区域。 晶体缺陷区域可以在不依赖于单晶硅中的氧浓度的情况下，而不需要额外的检查装置，可以准确，容易和快速地分析。