公开(公告)号：US06825467B2

公开(公告)日：2004-11-30

申请号：US10180221

申请日：2002-06-25

申请人： Jennifer Lynn Drown ,  Kim Elshot ,  Erik Cho Houge ,  Terri Lynn Shofner ,  Tingkwan Cheung

发明人： Jennifer Lynn Drown ,  Kim Elshot ,  Erik Cho Houge ,  Terri Lynn Shofner ,  Tingkwan Cheung

IPC分类号： G01N23203

CPC分类号： G01N23/20

摘要： The present invention provides and apparatus and method for scanning a crystalline sample comprising a sample holder, an electron source for generating an electron beam and a scanning actuator for controlling the relative movement between the electron beam and the crystalline sample. In addition, an image processor is provided for processing images from electrons from the crystalline sample and a controller for controlling the scanning actuator to space points on the crystalline sample, at which the electron beam is directed. The points are preferably spaced apart a distance that is at least as large as a known grain size of the crystalline sample. The controller determines a grain orientation with respect to each point within a series of points within a scan area of the crystalline sample. The controller determines an average grain orientation for the crystalline sample for current image and a previously processed image. The controller monitors a variance in the average deviation and terminates the scanning when the variance in the average grain orientation approaches a predetermined value.

摘要翻译： 本发明提供了用于扫描包括样品架，用于产生电子束的电子源和用于控制电子束和结晶样品之间的相对运动的扫描致动器的结晶样品的装置和方法。 此外，提供了一种用于处理来自结晶样品的电子的图像的图像处理器和用于控制扫描致动器以在电子束被引导的结晶样品上的空间点的控制器。 这些点优选间隔开至少与已知晶体尺寸的结晶样品一样大的距离。 控制器确定相对于晶体样品的扫描区域内的一系列点内的每个点的晶粒取向。 控制器确定当前图像和先前处理的图像的晶体样本的平均晶粒取向。 控制器监视平均偏差的变化，并且当平均晶粒取向的变化接近预定值时终止扫描。

公开(公告)号：US06783426B2

公开(公告)日：2004-08-31

申请号：US10120767

申请日：2002-04-10

申请人： Jennifer Lynne Drown ,  Kim Elshot ,  Erik Cho Houge ,  Tingkwan Cheung

发明人： Jennifer Lynne Drown ,  Kim Elshot ,  Erik Cho Houge ,  Tingkwan Cheung

IPC分类号： B24B4900

CPC分类号： B24B37/013 ,  B24B49/10

摘要： The present invention for a method and apparatus for detection of chemical mechanical planarization endpoint and device planarity comprises imparting at least one variation of an atomic mass of at least one material within the layer. The variation of the atomic mass within the layer is indicative of the layer thickness. The removal of the layer is monitored by detecting the variation in the atomic mass, and/or a change in concentration of the at least one material, during removal of the layer. Once the concentration of the material reaches a minimum threshold, or an atomic mass is detected at a minimum intensity, within a predetermined time duration, the removal of the layer is terminated. The variation in atomic mass, and/or concentration of materials within the layer is used to measure a planarity of the device.

摘要翻译： 用于检测化学机械平面化终点和器件平面性的方法和装置的本发明包括赋予层内至少一种材料的原子质量的至少一种变化。 层内的原子质量的变化表示层厚度。 通过在去除层期间检测原子质量的变化和/或至少一种材料的浓度变化来监测层的去除。 一旦材料的浓度达到最小阈值，或者在预定的持续时间内以最小强度检测到原子质量，则该层的去除被终止。 原子质量的变化和/或层内材料的浓度用于测量器件的平面度。