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公开(公告)号：US07855579B2
公开(公告)日：2010-12-21
申请号：US11594750
申请日：2006-11-09
CPC分类号： H01L23/5286 , H01L2924/0002 , H01L2924/00
摘要： In a layout process of a semiconductor integrated circuit, a power supply is initially formed in an arrangement in which the current threshold value is not exceeded. In a case where the excess over the current threshold value occurs after the power supply is formed, the power supply arrangement is changed according to the current threshold value, design rule data base, and power supply wiring density so as not to exceed the current threshold value.
摘要翻译： 在半导体集成电路的布局处理中，最初以不超过当前阈值的布置形成电源。 在形成电源之后发生超过电流阈值的情况下，电源配置根据当前阈值，设计规则数据库和电源配线密度而变化，以便不超过当前阈值 值。
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公开(公告)号：US08151238B2
公开(公告)日：2012-04-03
申请号：US12943549
申请日：2010-11-10
IPC分类号： G06F17/50 , G06F9/455 , H01L25/00 , H01L27/118 , H01L23/52
CPC分类号： H01L23/5286 , H01L2924/0002 , H01L2924/00
摘要： In a layout process of a semiconductor integrated circuit, a power supply is initially formed in an arrangement in which the current threshold value is not exceeded. In a case where the excess over the current threshold value occurs after the power supply is formed, the power supply arrangement is changed according to the current threshold value, design rule data base, and power supply wiring density so as not to exceed the current threshold value.
摘要翻译： 在半导体集成电路的布局处理中，最初以不超过当前阈值的布置形成电源。 在形成电源之后发生超过电流阈值的情况下，电源配置根据当前阈值，设计规则数据库和电源配线密度而变化，以便不超过当前阈值 值。
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公开(公告)号：US20110057320A1
公开(公告)日：2011-03-10
申请号：US12943549
申请日：2010-11-10
IPC分类号： H01L23/522
CPC分类号： H01L23/5286 , H01L2924/0002 , H01L2924/00
摘要： In a layout process of a semiconductor integrated circuit, a power supply is initially formed in an arrangement in which the current threshold value is not exceeded. In a case where the excess over the current threshold value occurs after the power supply is formed, the power supply arrangement is changed according to the current threshold value, design rule data base, and power supply wiring density so as not to exceed the current threshold value.
摘要翻译： 在半导体集成电路的布局处理中，最初以不超过当前阈值的布置形成电源。 在形成电源之后发生超过电流阈值的情况下，电源配置根据当前阈值，设计规则数据库和电源配线密度而变化，以便不超过当前阈值 值。
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公开(公告)号：US20070124715A1
公开(公告)日：2007-05-31
申请号：US11594750
申请日：2006-11-09
IPC分类号： G06F17/50
CPC分类号： H01L23/5286 , H01L2924/0002 , H01L2924/00
摘要： In a layout process of a semiconductor integrated circuit, a power supply is initially formed in an arrangement in which the current threshold value is not exceeded. In a case where the excess over the current threshold value occurs after the power supply is formed, the power supply arrangement is changed according to the current threshold value, design rule data base, and power supply wiring density so as not to exceed the current threshold value.
摘要翻译： 在半导体集成电路的布局处理中，最初以不超过当前阈值的布置形成电源。 在形成电源之后发生超过电流阈值的情况下，电源配置根据当前阈值，设计规则数据库和电源配线密度而变化，以便不超过当前阈值 值。
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