公开(公告)号：US08132128B2

公开(公告)日：2012-03-06

申请号：US12263278

申请日：2008-10-31

Applicant: Hua Song ,  Lantian Wang ,  Gerard Terrence Luk-Pat ,  James P. Shiely

Inventor： Hua Song ,  Lantian Wang ,  Gerard Terrence Luk-Pat ,  James P. Shiely

IPC: G06F17/50 ,  G06F19/00

CPC classification number: G03F7/70466 ,  G03F7/705 ,  G03F7/70666 ,  G03F7/70675

Abstract: One embodiment of the present invention provides a system that performs lithography verification for a double-patterning process on a mask layout without performing a full contour simulation of the mask layout. During operation, the system starts by receiving a first mask which is used in a first lithography step of the double-patterning process, and a second mask which is used in a second lithography step of the double-patterning process. Note that the first mask and the second mask are obtained by partitioning the mask layout. Next, the system receives an evaluation point on the mask layout. The system then determines whether the evaluation point is exclusively located on a polygon of the first mask, exclusively located on a polygon of the second mask, or located elsewhere. The system next computes a printing indicator at the evaluation point for the mask layout based on whether the evaluation point is exclusively located on a polygon of the first mask or exclusively located on a polygon of the second mask.

Abstract translation: 本发明的一个实施例提供一种对掩模布局进行双重图案化处理的光刻验证，而不执行掩模布局的全轮廓模拟的系统。 在操作期间，系统通过接收在双重图案化工艺的第一光刻步骤中使用的第一掩模和在双重图案化工艺的第二光刻步骤中使用的第二掩模开始。 注意，通过分割掩模布局获得第一掩模和第二掩模。 接下来，系统在掩码布局上接收评估点。 然后，系统确定评估点是否仅排列在第一掩模的多边形上，专门位于第二掩模的多边形上，或位于其他位置。 接下来，系统基于评估点是否仅位于第一掩模的多边形上或者仅位于第二掩模的多边形上，来计算掩模布局的评估点处的打印指示符。

公开(公告)号：US20100115489A1

公开(公告)日：2010-05-06

申请号：US12263278

申请日：2008-10-31

Applicant: Hua Song ,  Lantian Wang ,  Gerard Terrence Luk-Pat ,  James P. Shiely

Inventor： Hua Song ,  Lantian Wang ,  Gerard Terrence Luk-Pat ,  James P. Shiely

IPC: G06F17/50

CPC classification number: G03F7/70466 ,  G03F7/705 ,  G03F7/70666 ,  G03F7/70675

Abstract: One embodiment of the present invention provides a system that performs lithography verification for a double-patterning process on a mask layout without performing a full contour simulation of the mask layout. During operation, the system starts by receiving a first mask which is used in a first lithography step of the double-patterning process, and a second mask which is used in a second lithography step of the double-patterning process. Note that the first mask and the second mask are obtained by partitioning the mask layout. Next, the system receives an evaluation point on the mask layout. The system then determines whether the evaluation point is exclusively located on a polygon of the first mask, exclusively located on a polygon of the second mask, or located elsewhere. The system next computes a printing indicator at the evaluation point for the mask layout based on whether the evaluation point is exclusively located on a polygon of the first mask or exclusively located on a polygon of the second mask.

Abstract translation: 本发明的一个实施例提供一种对掩模布局进行双重图案化处理的光刻验证，而不执行掩模布局的全轮廓模拟的系统。 在操作期间，系统通过接收在双重图案化工艺的第一光刻步骤中使用的第一掩模和在双重图案化工艺的第二光刻步骤中使用的第二掩模开始。 注意，通过分割掩模布局获得第一掩模和第二掩模。 接下来，系统在掩码布局上接收评估点。 然后，系统确定评估点是否仅排列在第一掩模的多边形上，专门位于第二掩模的多边形上，或位于其他位置。 接下来，系统基于评估点是否仅位于第一掩模的多边形上或者仅位于第二掩模的多边形上，来计算掩模布局的评估点处的打印指示符。