公开(公告)号：US07482251B1

公开(公告)日：2009-01-27

申请号：US11891392

申请日：2007-08-09

Applicant: Ronald E Paulsen ,  Ronald L. Koepp ,  Yanjun Ma ,  Larry Morrell ,  Andrew E. Horch

Inventor： Ronald E Paulsen ,  Ronald L. Koepp ,  Yanjun Ma ,  Larry Morrell ,  Andrew E. Horch

IPC: H01L21/00 ,  H01L21/44

CPC classification number: H01L21/78

Abstract: Methods are provided, and devices made by such methods. One of the methods includes procuring a semiconductor wafer, processing the wafer to form a plurality of circuits on a top side, forming trenches on the top side between the adjacent circuits, forming a trench passivation layer on side walls of the trenches, forming conductive bumps on the top side of the wafer; and removing material from the bottom side to thin the wafer, and eventually separate the wafer along the trenches into dies, where each die includes only one of the circuits.

Abstract translation: 提供方法，以及通过这些方法制造的装置。 其中一种方法包括采购半导体晶片，处理晶片以在顶侧形成多个电路，在相邻电路之间的顶侧上形成沟槽，在沟槽的侧壁上形成沟槽钝化层，形成导电凸块 在晶片的顶面; 并且从底侧去除材料以使晶片细化，并且最终将晶片沿着沟槽分离成模具，其中每个管芯仅包括一个电路。