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1.发明授权CMOS temperature sensor with sensitivity set by current-mirror and resistor ratios without limiting DC bias 有权CMOS温度传感器，灵敏度由电流镜和电阻比设置，不限制直流偏置公开(公告)号：US08864377B2
公开(公告)日：2014-10-21
申请号：US13416728
申请日：2012-03-09
IPC分类号： G01K7/01
摘要： An on-chip temperature sensor circuit can be implemented in a standard complementary metal-oxide-semiconductor (CMOS) process using PNP transistors. A pair of transistors have collector currents that are sensitive to voltage, both directly and due to saturation currents. A scaling resistor connects to the emitter of one transistor and its voltage compared to the other transistor's emitter voltage by an error amplifier that generates a bias voltage to current sources that are proportional to absolute temperature since the saturation current sensitivity is subtracted out. The current is mirrored to sink current through a multiplier resistor from an output. An amplifier connected across the multiplier resistor compares a reference voltage to set the DC bias independent of temperature sensitivity. The temperature sensitivity is proportional to the ratio of the multiplier resistor and the scaling resistor, and is multiplied by a mirroring factor. A differential output may also be provided.
摘要翻译： 片上温度传感器电路可以在使用PNP晶体管的标准互补金属氧化物半导体（CMOS）工艺中实现。 一对晶体管具有对电压敏感的集电极电流，直接和由于饱和电流。 缩放电阻连接到一个晶体管的发射极，其电压与另一个晶体管的发射极电压相比较，该误差放大器产生与绝对温度成比例的电流源的偏置电压，因为饱和电流灵敏度被减去。 电流被镜像以从输出端吸收电流通过乘法器电阻。 连接在乘法器电阻上的放大器将参考电压进行比较，以独立于温度敏感度设置直流偏置。 温度灵敏度与乘法器电阻和比例电阻的比例成正比，并乘以镜像因子。 还可以提供差分输出。
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2.发明申请CMOS Temperature Sensor with Sensitivity Set by Current-Mirror and Resistor Ratios without Limiting DC Bias 有权CMOS温度传感器，灵敏度由电流镜和电阻比设定，不限制直流偏置公开(公告)号：US20130235903A1
公开(公告)日：2013-09-12
申请号：US13416728
申请日：2012-03-09
IPC分类号： G01K7/01
摘要： An on-chip temperature sensor circuit can be implemented in a standard complementary metal-oxide-semiconductor (CMOS) process using PNP transistors. A pair of transistors have collector currents that are sensitive to voltage, both directly and due to saturation currents. A scaling resistor connects to the emitter of one transistor and its voltage compared to the other transistor's emitter voltage by an error amplifier that generates a bias voltage to current sources that are proportional to absolute temperature since the saturation current sensitivity is subtracted out. The current is mirrored to sink current through a multiplier resistor from an output. An amplifier connected across the multiplier resistor compares a reference voltage to set the DC bias independent of temperature sensitivity. The temperature sensitivity is proportional to the ratio of the multiplier resistor and the scaling resistor, and is multiplied by a mirroring factor. A differential output may also be provided.
摘要翻译： 片上温度传感器电路可以在使用PNP晶体管的标准互补金属氧化物半导体（CMOS）工艺中实现。 一对晶体管具有对电压敏感的集电极电流，直接和由于饱和电流。 缩放电阻连接到一个晶体管的发射极，其电压与另一个晶体管的发射极电压相比较，该误差放大器产生与绝对温度成比例的电流源的偏置电压，因为饱和电流灵敏度被减去。 电流被镜像以从输出端吸收电流通过乘法器电阻。 连接在乘法器电阻上的放大器将参考电压进行比较，以独立于温度敏感度设置直流偏置。 温度灵敏度与乘法器电阻和比例电阻的比例成正比，并乘以镜像因子。 还可以提供差分输出。
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3.发明授权公开(公告)号：US08797776B2
公开(公告)日：2014-08-05
申请号：US13652474
申请日：2012-10-16
IPC分类号： H02M7/5387
CPC分类号： H02M7/219 , H02M2007/2195 , Y02B70/1408
摘要： A bridge rectifier operates on low A.C. input voltages such as received by a Radio-Frequency Identification (RFID) device. Voltage drops due to bridge diodes are avoided. Four p-channel transistors are arranged in a transistor bridge across the A.C. inputs to produce an internal power voltage. Another four diode-connected transistors form a start-up diode bridge that generates a comparator power voltage and a reference ground. The start-up diode bridge operates even during initial start-up before the comparator and boost drivers operate. A comparator receives the A.C. input and controls timing of voltage boost drivers that alternately drive gates of the four p-channel transistors in the transistor bridge with voltages boosted higher than the peak A.C. voltage. Substrates are connected to the power voltage on the power-voltage half of the bridge and to the A.C. inputs on the ground half of the bridge to fully shut off transistors, preventing reverse current flow.
摘要翻译： 桥式整流器在诸如由射频识别（RFID）设备接收的低交流输入电压下工作。 避免了由桥二极管引起的电压降。 四个P沟道晶体管布置在跨越交流输入的晶体管桥中以产生内部电源电压。 另外四个二极管连接的晶体管形成起始二极管电桥，产生比较器电源电压和参考地。 在比较器和升压驱动器运行之前，起动二极管桥即使在初始启动期间也工作。 比较器接收交流输入并且控制升压驱动器的定时，其交替地驱动晶体管桥中的四个p沟道晶体管的栅极，其电压升高高于峰值交流电压。 基板连接到桥的电源电压一半的电源电压和桥接器的一半的交流输入，以完全关闭晶体管，防止反向电流流动。
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4.发明申请公开(公告)号：US20140104909A1
公开(公告)日：2014-04-17
申请号：US13652474
申请日：2012-10-16
IPC分类号： H02M7/217
CPC分类号： H02M7/219 , H02M2007/2195 , Y02B70/1408
摘要： A bridge rectifier operates on low A.C. input voltages such as received by a Radio-Frequency Identification (RFID) device. Voltage drops due to bridge diodes are avoided. Four p-channel transistors are arranged in a transistor bridge across the A.C. inputs to produce an internal power voltage. Another four diode-connected transistors form a start-up diode bridge that generates a comparator power voltage and a reference ground. The start-up diode bridge operates even during initial start-up before the comparator and boost drivers operate. A comparator receives the A.C. input and controls timing of voltage boost drivers that alternately drive gates of the four p-channel transistors in the transistor bridge with voltages boosted higher than the peak A.C. voltage. Substrates are connected to the power voltage on the power-voltage half of the bridge and to the A.C. inputs on the ground half of the bridge to fully shut off transistors, preventing reverse current flow.
摘要翻译： 桥式整流器在诸如由射频识别（RFID）设备接收的低交流输入电压下工作。 避免了由桥二极管引起的电压降。 四个P沟道晶体管布置在跨越交流输入的晶体管桥中以产生内部电源电压。 另外四个二极管连接的晶体管形成起始二极管电桥，产生比较器电源电压和参考地。 在比较器和升压驱动器运行之前，起动二极管桥即使在初始启动期间也工作。 比较器接收交流输入并且控制升压驱动器的定时，其交替地驱动晶体管桥中的四个p沟道晶体管的栅极，其电压升高高于峰值交流电压。 基板连接到桥的电源电压一半的电源电压和桥接器的一半的交流输入，以完全关闭晶体管，防止反向电流流动。
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