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    Filter window, lithographic projection apparatus, filter window manufacturing method, device manufacturing method and device manufactured thereby
    1.
    发明授权
    Filter window, lithographic projection apparatus, filter window manufacturing method, device manufacturing method and device manufactured thereby 有权
    滤光镜，光刻投影装置，滤光片制造方法，装置制造方法和由此制造的装置

    公开(公告)号：US07456932B2

    公开(公告)日：2008-11-25

    申请号：US10887329

    申请日：2004-07-09

    申请人： Levinius Pieter Bakker ,  Ralph Kurt

    发明人： Levinius Pieter Bakker ,  Ralph Kurt

    IPC分类号： G03B27/32 ,  G03B27/54

    CPC分类号： G03F1/62 ,  B82Y10/00 ,  B82Y40/00 ,  G03F1/24 ,  G21K1/10

    摘要： A filter window for EUV lithography includes a pellicle, and a wire structure for supporting the pellicle. The pellicle includes a first layer that includes at least one of AlN, Ru, Ir, Au, SiN, Rh. The pellicle has a very low EUV absorption in combination with a minimal oxidation rate. The thickness of the pellicle may be between 30 nm and 100 nm. It can be easily checked that absorption of EUV radiation of such a thin pellicle is equal to known filter windows, i.e. about 50% at a wavelength of 13.5 nm wavelength, but the oxidation of the pellicle according to the invention is much smaller. The filter window can for example be used to separate a Projection Optics box and a wafer compartment of the apparatus or to shield a reticle from particle contamination.

    摘要翻译： 用于EUV光刻的滤光镜包括防护薄膜组件和用于支撑防护薄膜的线结构。 防护薄膜组件包括包含AlN，Ru，Ir，Au，SiN，Rh中的至少一种的第一层。 防护薄膜组件具有非常低的EUV吸收，同时具有最小的氧化速率。 防护薄膜的厚度可以在30nm和100nm之间。 可以容易地检查这种薄膜的EUV辐射的吸收等于已知的滤光器窗口，即波长13.5nm波长的约50％，但是根据本发明的防护薄膜组件的氧化要小得多。 过滤器窗口可以例如用于分离投影光学盒和装置的晶片隔室或屏蔽掩模版与颗粒污染。