公开(公告)号：US06362653B1

公开(公告)日：2002-03-26

申请号：US09777286

申请日：2001-02-06

Applicant: Terry C. Coughlin, Jr. ,  Joseph M. Milewski ,  Loc K. Nguyen ,  Douglas W. Stout

Inventor： Terry C. Coughlin, Jr. ,  Joseph M. Milewski ,  Loc K. Nguyen ,  Douglas W. Stout

IPC: H03K1716

CPC classification number: H03K19/00315

Abstract: A high voltage tolerant receiver that matches a voltage drop across an NFET pass-gate at the input to the receiver with a voltage drop across a semiconductor device, formatted as a diode, and connected between an input stage and an input stage voltage supply source.

Abstract translation: 一个高耐压接收器，其匹配在接收器的输入端上的NFET通过栅极上的电压降，并且跨接半导体器件的压降，被格式化为二极管，并连接在输入级和输入级电压源之间。