公开(公告)号：US06573149B2

公开(公告)日：2003-06-03

申请号：US09940126

申请日：2001-08-27

申请人： Isik C. Kizilyalli ,  Ranbir Singh ,  Lori Stirling

发明人： Isik C. Kizilyalli ,  Ranbir Singh ,  Lori Stirling

IPC分类号： H01L2120

CPC分类号： H01L21/823842 ,  H01L21/28079 ,  H01L29/4958

摘要： The present invention provides a semiconductor device located on a semiconductor substrate having opposite types of first and second transistors formed thereon. The device preferably includes a first gate electrode that includes a first metal gate electrode material having a work function compatible with the first transistor, and a second gate electrode that includes a second metal gate electrode material having a work function compatible with the second transistor and the first metal gate electrode material is also located over the second metal gate electrode material, which forms a gate stack.

公开(公告)号：US06579775B2

公开(公告)日：2003-06-17

申请号：US10003871

申请日：2001-10-24

申请人： Isik C. Kizilyalli ,  Ranbir Singh ,  Lori Stirling

发明人： Isik C. Kizilyalli ,  Ranbir Singh ,  Lori Stirling

IPC分类号： H01L2120

CPC分类号： H01L21/823842 ,  H01L21/28079 ,  H01L29/4958

摘要： The present invention provides a semiconductor device located on a semiconductor substrate having opposite types of first and second transistors formed thereon. The device preferably includes a first gate electrode that includes a first metal gate electrode material having a work function compatible with the first transistor, and a second gate electrode that includes a second metal gate electrode material having a work function compatible with the second transistor and the first metal gate electrode material is also located over the second metal gate electrode material, which forms a gate stack.

公开(公告)号：US06383879B1

公开(公告)日：2002-05-07

申请号：US09572060

申请日：2000-05-17

申请人： Isik C. Kizilyalli ,  Ranbir Singh ,  Lori Stirling

发明人： Isik C. Kizilyalli ,  Ranbir Singh ,  Lori Stirling

IPC分类号： H01L21336

CPC分类号： H01L21/823842 ,  H01L21/28079 ,  H01L29/4958

摘要： The present invention provides a semiconductor device located on a semiconductor substrate having opposite types of first and second transistors formed thereon. The device preferably includes a first gate electrode that includes a first metal gate electrode material having a work function compatible with the first transistor, and a second gate electrode that includes a second metal gate electrode material having a work function compatible with the second transistor and the first metal gate electrode material is also located over the second metal gate electrode material, which forms a gate stack.