Method of producing an etch-resistant polymer structure using electron beam lithography
    1.
    发明授权
    Method of producing an etch-resistant polymer structure using electron beam lithography 失效
    使用电子束光刻制造耐蚀刻聚合物结构的方法

    公开(公告)号:US06777167B2

    公开(公告)日:2004-08-17

    申请号:US10103643

    申请日:2002-03-20

    IPC分类号: G03F900

    摘要: The present invention relates to a method of producing a structure of etch-resistant polymer on a substrate. A layer of sterol capable of polymerizing to form this structure is first deposited on a face of the substrate. Then, a first region of the layer of sterol is exposed to an electron beam to locally polymerize this layer and form the structure of etch-resistant polymer. A second region of the layer of sterol that has not been exposed to the electron beam is removed to leave on the face of the substrate only the structure of etch-resistant polymer. Finally, a region of the face of the substrate not covered by the structure of etch-resistant polymer can be etched away, and the structure of etch-resistant polymer removed following this etching.

    摘要翻译: 本发明涉及在衬底上制造耐蚀刻聚合物结构的方法。 首先将能够聚合形成该结构的固醇层沉积在基材的表面上。 然后,将固醇层的第一区域暴露于电子束以局部聚合该层并形成耐蚀刻聚合物的结构。 去除未暴露于电子束的固醇层的第二区域,仅在基材的表面上留下耐腐蚀聚合物的结构。 最后,可以蚀刻掉不被耐蚀刻聚合物结构覆盖的衬底的表面的区域,并且在该蚀刻之后除去耐蚀刻聚合物的结构。