公开(公告)号：US06228278B1

公开(公告)日：2001-05-08

申请号：US09164389

申请日：1998-09-30

申请人： Jaroslaw W. Winniczek ,  M. J. Francois Chandrasekar Dassapa ,  Eric A. Hudson ,  Mark Wiepking

发明人： Jaroslaw W. Winniczek ,  M. J. Francois Chandrasekar Dassapa ,  Eric A. Hudson ,  Mark Wiepking

IPC分类号： G01R3100

CPC分类号： H01L22/26 ,  H01J37/32935 ,  H01J37/32963

摘要： Methods and apparatus for ascertaining the end of an etch process while etching through a target layer on a substrate in a plasma processing system which employs an electrostatic chuck. The end of the etch process is ascertained by monitoring the electric potential of the substrate to detect a pattern indicative of the end of the etch process. By the way of example, changes to this potential may be observed by monitoring the current flowing to the pole of the electrostatic chuck. Upon ascertaining the pattern indicative of the end of the etch process, for example by monitoring the current signal, a control signal is produced to terminate the etch. If a bias compensation power supply is provided to keep the currents flowing to the poles of the electrostatic chuck substantially equal but opposite in sign throughout the etch, the compensation voltage output by the bias compensation power supply may be monitored for the aforementioned pattern indicative of the end of the etch process in order to terminate the etch.

摘要翻译： 在使用静电卡盘的等离子体处理系统中蚀刻通过基板上的目标层时确定蚀刻工艺结束的方法和装置。 通过监测衬底的电位以检测指示蚀刻工艺结束的图案来确定蚀刻工艺的结束。 作为示例，通过监测流向静电卡盘的极点的电流可以观察到对该电位的变化。 在确定表示蚀刻工艺结束的图案时，例如通过监视当前信号，产生控制信号以终止蚀刻。 如果提供偏置补偿电源以在整个蚀刻期间保持流过静电卡盘的磁极的电流基本上相等但相反，则可以监视由偏置补偿电源输出的补偿电压，以指示上述模式， 结束蚀刻工艺以终止蚀刻。

公开(公告)号：US06562187B2

公开(公告)日：2003-05-13

申请号：US09792376

申请日：2001-02-23

申请人： Jaroslaw W. Winniczek ,  M. J. Francois Chandrasekar Dassapa ,  Eric A. Hudson ,  Mark Wiepking

发明人： Jaroslaw W. Winniczek ,  M. J. Francois Chandrasekar Dassapa ,  Eric A. Hudson ,  Mark Wiepking

IPC分类号： H05H100

CPC分类号： H01L22/26 ,  H01J37/32935 ,  H01J37/32963

摘要： Methods and apparatus for ascertaining the end of an etch process while etching through a target layer on a substrate in a plasma processing system which employs an electrostatic chuck. The end of the etch process is ascertained by monitoring the electric potential of the substrate to detect a pattern indicative of the end of the etch process. By the way of example, changes to this potential may be observed by monitoring the current flowing to the pole of the electrostatic chuck. Upon ascertaining the pattern indicative of the end of the etch process, for example by monitoring the current signal, a control signal is produced to terminate the etch. If a bias compensation power supply is provided to keep the currents flowing to the poles of the electrostatic chuck substantially equal but opposite in sign throughout the etch, the compensation voltage output by the bias compensation power supply may be monitored for the aforementioned pattern indicative of the end of the etch process in order to terminate the etch.

摘要翻译： 在使用静电卡盘的等离子体处理系统中蚀刻通过基板上的目标层时确定蚀刻工艺结束的方法和装置。 通过监测衬底的电位以检测指示蚀刻工艺结束的图案来确定蚀刻工艺的结束。 作为示例，通过监测流向静电卡盘的极点的电流可以观察到对该电位的变化。 在确定表示蚀刻工艺结束的图案时，例如通过监视当前信号，产生控制信号以终止蚀刻。 如果提供偏置补偿电源以在整个蚀刻期间保持流过静电卡盘的磁极的电流基本上相等但相反，则可以监视由偏置补偿电源输出的补偿电压，以指示上述模式， 结束蚀刻工艺以终止蚀刻。