公开(公告)号：US20150028268A1

公开(公告)日：2015-01-29

申请号：US14383321

申请日：2012-03-08

申请人： Shinji Tokumaru ,  Masataka HIiyoshi ,  Jiro Kondo ,  Hitoshi Dohnomae ,  Yutaka Kishida ,  Shigeru Nakazawa ,  Kozo Onoue

发明人： Shinji Tokumaru ,  Masataka HIiyoshi ,  Jiro Kondo ,  Hitoshi Dohnomae ,  Yutaka Kishida ,  Shigeru Nakazawa ,  Kozo Onoue

IPC分类号： C01B33/037 ,  H01L31/0288

CPC分类号： C01B33/037 ,  C01B33/021 ,  C30B11/002 ,  C30B11/007 ,  C30B13/10 ,  C30B21/00 ,  C30B29/06 ,  H01L31/0288

摘要： Provided are a method for manufacturing a highly pure silicon by unidirectional solidification of molten silicon, that can inexpensively and industrially easily manufacture highly pure silicon that has a low oxygen concentration and low carbon concentration and is suitable for applications such as manufacturing solar cells; highly pure silicon obtained by this method and silicon raw material for manufacturing highly pure silicon. A method for manufacturing highly pure silicon using molten silicon containing 100 to 1000 ppmw of carbon and 0.5 to 2000 ppmw of germanium as the raw material when manufacturing highly pure silicon by unidirectionally solidifying molten silicon raw material in a casting container, the highly pure silicon obtained by this method, and the silicon raw material for manufacturing the highly pure silicon.

摘要翻译： 提供一种通过熔融硅的单向凝固来制造高纯度硅的方法，其可以廉价和工业上容易地制造具有低氧浓度和低碳浓度的高纯度硅，并且适用于制造太阳能电池的应用; 通过该方法获得的高纯度硅和用于制造高纯度硅的硅原料。 通过在铸造容器中单独固化熔融硅原料制造高纯度硅时，使用含有100〜1000ppmw碳和0.5〜2000ppmw的锗作为原料的熔融硅制造高纯硅的方法，得到高纯硅 通过该方法和用于制造高纯度硅的硅原料。