公开(公告)号：US07714406B2

公开(公告)日：2010-05-11

申请号：US11924166

申请日：2007-10-25

Applicant: Marvin Raymond LaFontaine ,  Michael Pharand ,  Leonard Michael Rubin ,  Klaus Becker

Inventor： Marvin Raymond LaFontaine ,  Michael Pharand ,  Leonard Michael Rubin ,  Klaus Becker

IPC: H01L27/10

CPC classification number: H01L21/6833 ,  H02N13/00

Abstract: A method for manufacturing a semiconductor wafer electrostatic clamp, comprising providing a mounting plate, forming an insulative layer on an insulating portion of the mounting plate, forming a first electrode on a first portion of the mounting plate, forming a second electrode on a second portion of the mounting plate, forming a first segment having a first conductivity over the first electrode, forming a first region having a second conductivity over the first segment that creates an n-p type composite, forming a second segment having a third conductivity formed over the over the second electrode, forming a second region having a fourth conductivity formed over the second region that creates an p-n type composite.

Abstract translation: 一种制造半导体晶片静电夹的方法，包括提供安装板，在安装板的绝缘部分上形成绝缘层，在安装板的第一部分上形成第一电极，在第二部分上形成第二电极 在所述第一电极上形成具有第一导电性的第一区段，在所述第一区段上形成具有第二导电性的第一区域，所述第一区域在所述第一区段上形成np型复合材料，形成具有第三导电性的第二区段， 形成具有形成在第二区域上的第四导电性的第二区域，形成pn型复合材料的第二区域。

公开(公告)号：US20080100984A1

公开(公告)日：2008-05-01

申请号：US11924166

申请日：2007-10-25

Applicant: Marvin Raymond LaFontaine ,  Michael Pharand ,  Leonard Michael Rubin ,  Klaus Becker

Inventor： Marvin Raymond LaFontaine ,  Michael Pharand ,  Leonard Michael Rubin ,  Klaus Becker

IPC: H01L21/683 ,  H01L21/761

CPC classification number: H01L21/6833 ,  H02N13/00

Abstract: A method for manufacturing a semiconductor wafer electrostatic clamp, comprising providing a mounting plate, forming an insulative layer on an insulating portion of the mounting plate, forming a first electrode on a first portion of the mounting plate, forming a second electrode on a second portion of the mounting plate, forming a first segment having a first conductivity over the first electrode, forming a first region having a second conductivity over the first segment that creates an n-p type composite, forming a second segment having a third conductivity formed over the over the second electrode, forming a second region having a fourth conductivity formed over the second region that creates an p-n type composite.

Abstract translation: 一种制造半导体晶片静电夹的方法，包括提供安装板，在安装板的绝缘部分上形成绝缘层，在安装板的第一部分上形成第一电极，在第二部分上形成第二电极 在所述第一电极上形成具有第一导电性的第一区段，在所述第一区段上形成具有第二导电性的第一区域，所述第一区域在所述第一区段上形成np型复合材料，形成具有第三导电性的第二区段， 形成具有形成在第二区域上的第四导电性的第二区域，形成pn型复合材料的第二区域。