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1.发明授权Apparatus and method for producing polycrystalline silicon having a reduced amount of boron compounds by forming phosphorus-boron compounds 失效通过形成磷 - 硼化合物来生产具有减少量的硼化合物的多晶硅的装置和方法公开(公告)号：US08404205B2
公开(公告)日：2013-03-26
申请号：US12986794
申请日：2011-01-07
IPC分类号： C01B33/03 , C01B33/035
CPC分类号： C01B33/035 , B01J8/18 , B01J2219/00006
摘要： The invention concerns an apparatus and a method for manufacturing polycrystalline silicon having a reduced amount of boron compounds. The invention provides an apparatus and a method which mix an unpurified trichlorosilane with purified hydrogen gas from an activated carbon tower. The mixture is sent to a distillation apparatus for purifying trichlorosilane.
摘要翻译： 本发明涉及一种制造具有减少硼化合物量的多晶硅的装置和方法。 本发明提供了一种将未纯化的三氯硅烷与来自活性炭塔的纯化氢气混合的装置和方法。 将混合物送入用于纯化三氯硅烷的蒸馏装置。
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2.发明申请APPARATUS AND METHOD FOR PRODUCING POLYCRYSTALLINE SILICON HAVING A REDUCED AMOUNT OF BORON COMPOUNDS BY FORMING PHOSPHORUS-BORON COMPOUNDS 失效通过形成磷光体化合物生产具有减少量的硼原子的多晶硅的装置和方法公开(公告)号：US20120177559A1
公开(公告)日：2012-07-12
申请号：US12986794
申请日：2011-01-07
IPC分类号： C01B33/039 , B01J8/18
CPC分类号： C01B33/035 , B01J8/18 , B01J2219/00006
摘要： The invention concerns an apparatus and a method for manufacturing polycrystalline silicon having a reduced amount of boron compounds. The invention provides an apparatus and a method which mix an unpurified trichlorosilane with purified hydrogen gas from an activated carbon tower. The mixture is sent to a distillation apparatus for purifying trichlorosilane.
摘要翻译： 本发明涉及一种制造具有减少硼化合物量的多晶硅的装置和方法。 本发明提供了一种将未纯化的三氯硅烷与来自活性炭塔的纯化氢气混合的装置和方法。 将混合物送入用于纯化三氯硅烷的蒸馏装置。
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