公开(公告)号：US07144744B2

公开(公告)日：2006-12-05

申请号：US10977003

申请日：2004-10-27

申请人： Mitchell T. Lien ,  Mark A. Durlam ,  Thomas V. Meixner ,  Loren J. Wise

发明人： Mitchell T. Lien ,  Mark A. Durlam ,  Thomas V. Meixner ,  Loren J. Wise

IPC分类号： H01L21/00

CPC分类号： H01L43/12 ,  H01L21/76834 ,  H01L21/76841 ,  H01L21/76843

摘要： Magnetoelectronic memory element structures and methods for making such structures using a barrier layer as a material removal stop layer are provided. The methods comprise forming a digit line disposed at least partially within a dielectric layer. The dielectric material layer overlies an interconnect stack. A void space is etched in the dielectric layer to expose the interconnect stack. A conductive-barrier layer having a first portion and a second portion is deposited. The first portion overlies the digit line and the second portion is disposed within the void space and in electrical communication with the interconnect stack. A memory element layer is formed overlying the first portion and an electrode layer is deposited overlying the memory element layer. The electrode layer and the memory element layer are then patterned and etched.

摘要翻译： 提供了使用阻挡层作为材料去除停止层来制造这种结构的磁电存储元件结构和方法。 所述方法包括形成至少部分地设置在电介质层内的数字线。 电介质材料层覆盖互连叠层。 在电介质层中蚀刻空隙以暴露互连叠层。 沉积具有第一部分和第二部分的导电阻挡层。 第一部分覆盖数字线，第二部分设置在空隙空间内并与互连叠层电连通。 形成覆盖在第一部分上的存储元件层，并且沉积覆盖存储元件层的电极层。 然后对电极层和存储元件层进行图案化和蚀刻。

公开(公告)号：US07031183B2

公开(公告)日：2006-04-18

申请号：US10730239

申请日：2003-12-08

申请人： Gloria J. Kerszykowski ,  Li Hsin Chang ,  Mark A. Durlam ,  Mitchell T. Lien ,  Thomas V. Meixner ,  Loren J. Wise

发明人： Gloria J. Kerszykowski ,  Li Hsin Chang ,  Mark A. Durlam ,  Mitchell T. Lien ,  Thomas V. Meixner ,  Loren J. Wise

IPC分类号： G11C7/00

CPC分类号： G11C11/15

摘要： A magnetoresistive random access memory (MRAM) is embedded with another circuit type. Logic, such as a processing unit, is particularly well-suited circuit type for embedding with MRAM. The embedding is made more efficient by using a metal layer that is used as part of the interconnect for the other circuit also as part of the MRAM cell. The MRAM cells are all written by program lines, which are the two lines that cross to define a cell to be written. Thus, the design is simplified because there is commonality of usage of the metal line that is used for one of the program lines for the MRAM and for one of the interconnect lines for the logic.

摘要翻译： 磁阻随机存取存储器（MRAM）嵌入另一种电路类型。 诸如处理单元之类的逻辑特别适用于用MRAM嵌入的电路类型。 通过使用金属层作为MRAM单元的一部分，作为用于另一电路的互连部分的金属层，使嵌入更加有效。 MRAM单元全部由程序行写入，它们是用于定义要写入的单元格的两条线。 因此，简化了设计，因为对于用于MRAM的程序行之一和用于逻辑的互连线之一的金属线的使用是共同的。