公开(公告)号：US20070151949A1

公开(公告)日：2007-07-05

申请号：US11326267

申请日：2006-01-04

申请人： Shiu-Ko Jian ,  Morning Wu ,  W. Huang ,  C. Sun

发明人： Shiu-Ko Jian ,  Morning Wu ,  W. Huang ,  C. Sun

IPC分类号： B44C1/22 ,  C23F1/00 ,  H01L21/306 ,  H01L21/302

CPC分类号： H01L21/31111 ,  H01L21/02079

摘要： Methods of semiconductor processing and apparatuses are disclosed. An organic solvent is applied over a surface of a material layer on a substrate in which the material layer includes a short-chain structure. A fluorine-containing solution is applied over the surface of the material layer to substantially remove the material layer from the substrate. The apparatus comprises the wafer holder coupled to the organic solvent source and the fluorine solution source. The wafer holder accommodates at least one wafer. The organic solvent source supplies an organic solvent with a temperature from about 18° C. to about 40° C., a concentration from about 90 w. % to about 100 w. % and is applied over the substrate about 100 seconds or more. The fluorine solution source containing fluorine solution supplies the fluorine-containing solution with a temperature from about 18° C. to about 70° C. and a concentration from about 1 w. % to about 49 w. %.

摘要翻译： 公开了半导体处理方法和装置。 将有机溶剂施加在基材上的材料层的表面上，其中材料层包括短链结构。 将含氟溶液施加在材料层的表面上，以从衬底基本上去除材料层。 该装置包括与有机溶剂源和氟溶液源耦合的晶片保持器。 晶片架容纳至少一个晶片。 有机溶剂源提供温度为约18℃至约40℃，浓度为约90w的有机溶剂。 ％至约100w。 ％，并施加在基材上约100秒以上。 含有氟溶液的氟溶液源将含氟溶液的温度从约18℃至约70℃提供，浓度约为1w。 ％至约49 w。 ％。