公开(公告)号：US4205342A

公开(公告)日：1980-05-27

申请号：US898681

申请日：1978-04-21

申请人： Mougahed Y. Darwish ,  Henri J. Oguey

发明人： Mougahed Y. Darwish ,  Henri J. Oguey

IPC分类号： H01L21/8238 ,  H01L27/092 ,  H01L29/78 ,  H01L29/8605 ,  H01L21/22 ,  H01L27/04

CPC分类号： H01L29/7838 ,  H01L27/092 ,  H01L29/8605

摘要： A CMOS integrated circuit structure is provided having circuit elements which can function as high resistances or stable current sources. The circuit elements include a region of intermediate doping which has a surface concentration between that of a substrate and a homogeneous region of a doped pocket formed therein. The region of intermediate doping is formed by the vicinity of two pocket edges, these edges being separated by a distance which is substantially not greater than twice the length of the lateral diffusion of the doping of the pockets.

摘要翻译： 提供了具有可以用作高电阻或稳定电流源的电路元件的CMOS集成电路结构。 电路元件包括中间掺杂的区域，其表面浓度介于衬底和其中形成的掺杂凹坑的均匀区域之间。 中间掺杂的区域由两个凹口边缘附近形成，这些边缘被分开的距离基本上不大于穴袋掺杂的横向扩散长度的两倍。