公开(公告)号：US07749874B2

公开(公告)日：2010-07-06

申请号：US11691457

申请日：2007-03-26

申请人： Clifford I. Drowley ,  David Cohen ,  Assaf Lahav ,  Shai Kfir ,  Naor Inbar ,  Anatoly Sergienko ,  Vladimir Korobov

发明人： Clifford I. Drowley ,  David Cohen ,  Assaf Lahav ,  Shai Kfir ,  Naor Inbar ,  Anatoly Sergienko ,  Vladimir Korobov

IPC分类号： H01L21/425 ,  H01L31/062 ,  H01L31/113

CPC分类号： H01L27/14689 ,  H01L27/14609

摘要： A CMOS image sensor includes a pinned photodiode and a transfer gate that are formed using a thick mask that is self-aligned to at least one edge of the polysilicon gate structure to facilitate both the formation of a deep implant and to provide proper alignment between the photodiode implant and the gate. In one embodiment a drain side implant is formed concurrently with the deep n-type implant of the photodiode. After the deep implant, the mask is removed and a shallow p+ implant is formed to complete the photodiode. In another embodiment, the polysilicon is etched to define only a drain side edge, a shallow drain side implant is performed, and then a thick mask is provided and used to complete the gate structure, and is retained during the subsequent high energy implant. Alternatively, the high energy implant is performed prior to the shallow drain side implant.

摘要翻译： CMOS图像传感器包括钉扎光电二极管和传输栅极，其使用与多晶硅栅极结构的至少一个边缘自对准的厚掩模形成，以便于形成深度注入并且在两者之间提供适当的对准 光电二极管植入和栅极。 在一个实施例中，漏极侧注入与光电二极管的深n型注入同时形成。 深入植入后，去除掩模，形成浅的p +注入以完成光电二极管。 在另一个实施例中，多晶硅被蚀刻以仅限定漏极侧边缘，执行浅漏极侧注入，然后提供厚掩模并用于完成栅极结构，并且在随后的高能量注入期间被保留。 或者，在浅排水侧植入之前执行高能量注入。

公开(公告)号：US20080237653A1

公开(公告)日：2008-10-02

申请号：US11691457

申请日：2007-03-26

申请人： Clifford Ian Drowley ,  David Cohen ,  Assaf Lahav ,  Shai Kfir ,  Naor Inbar ,  Anatoly Sergienko ,  Vladimir Korobov

发明人： Clifford Ian Drowley ,  David Cohen ,  Assaf Lahav ,  Shai Kfir ,  Naor Inbar ,  Anatoly Sergienko ,  Vladimir Korobov

IPC分类号： H01L27/105 ,  H01L21/339

CPC分类号： H01L27/14689 ,  H01L27/14609

摘要： A CMOS image sensor includes a pinned photodiode and a transfer gate that are formed using a thick mask that is self-aligned to at least one edge of the polysilicon gate structure to facilitate both the formation of a deep implant and to provide proper alignment between the photodiode implant and the gate. In one embodiment a drain side implant is formed concurrently with the deep n-type implant of the photodiode. After the deep implant, the mask is removed and a shallow p+ implant is formed to complete the photodiode. In another embodiment, the polysilicon is etched to define only a drain side edge, a shallow drain side implant is performed, and then a thick mask is provided and used to complete the gate structure, and is retained during the subsequent high energy implant. Alternatively, the high energy implant is performed prior to the shallow drain side implant.

摘要翻译： CMOS图像传感器包括钉扎光电二极管和传输栅极，其使用与多晶硅栅极结构的至少一个边缘自对准的厚掩模形成，以便于形成深度注入并且在两者之间提供适当的对准 光电二极管植入和栅极。 在一个实施例中，漏极侧注入与光电二极管的深n型注入同时形成。 深入植入后，去除掩模，形成浅的p +注入以完成光电二极管。 在另一个实施例中，多晶硅被蚀刻以仅限定漏极侧边缘，执行浅漏极侧注入，然后提供厚掩模并用于完成栅极结构，并且在随后的高能量注入期间被保留。 或者，在浅排水侧植入之前执行高能量注入。